摘要
为了防止电源反向保护电路中反接的NMOS管衬底和漏极寄生二极管正向击穿,提出了一种衬底电位自调整结构。通过在保护管衬底增加上拉耗尽型NMOS管和下拉n型双扩散(ND)MOS管,自动调整保护管在正向导通和反向截止时的衬底电位,防止其衬底和源、漏之间的寄生二极管正向导通。芯片采用0.35μm BCD工艺完成设计和流片,保护电路版图面积为0.10 mm^(2),衬底电位自调整电路版图面积为0.01 mm^(2)。测试结果表明:正向工作最大击穿电压由1 V提高至9 V,过电流保护值为1.4 A,反向保护最大击穿电压达到了-26 V。与同类型电路相比,正向击穿电压有了大幅提高,显著改善了电源反向保护电路的性能。
In order to prevent the forward breakdown of the reverse connected NMOSFET substrate and drain parasitic diode in the reverse battery protection circuit,a substrate potential self-adjusting structure was proposed.By adding a pull-up depletion NMOSFET and a pull-down n-type double-diffused MOSFET(NDMOSFET)to the protection device substrate,the potential of the protection device substrate during forward conduction and reverse cutoff can be automatically adjusted to prevent the parasitic diodes of the substrate-source and substrate-drain from conducting in the forward direction.The chip was designed and fabricated using 0.35μm BCD process.The protection circuit layout area is 0.10 mm^(2),and the substrate potential self-adjusting circuit area is 0.01 mm^(2).The test results show that the maximum forward operation breakdown voltage is increased from 1 V to 9 V,the over-current protection value is 1.4 A,and the maximum reverse protection breakdown voltage reaches-26 V.Compared with the same type of circuit,the forward breakdown voltage is greatly improved,and the performance of the reverse battery protection circuit is significantly improved.
作者
李涛
徐江涛
彭宇
Li Tao;Xu Jiangtao;Peng Yu(School of Microelectronics,Tianjin University,Tianjin 300072,China;School of Electrical and Electronic Engineering,Tianjin University of Technology,Tianjin 300384,China)
出处
《半导体技术》
CAS
北大核心
2021年第11期841-846,860,共7页
Semiconductor Technology
关键词
n型衬底
电源反向
浮动衬底
保护电路
自调整
n-type substrate
reverse battery
floating substrate
protection circuit
self-adjusting
