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表面针状铜基微纳米阵列材料与锡基焊料固态焊接 被引量:1

Solid-State Welding of Surface Needle-Like Copper Based Micro-Nano Array Materials and Tin-Based Solder
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摘要 提出一种基于针状铜基微纳米材料的低温固态焊接方法。采用化学镀法制备出一种表面针状铜基微纳米阵列结构,铜针阵列高度为1~3μm,根直径为1~2μm。将锡基焊料置于具有这种形貌的基板上,在加热温度190℃、压力800 g的条件下对接触区域进行焊接。较硬的铜针结构容易插进较软的锡基焊料中,形成机械互锁。针状结构具有巨大的表面积,有利于铜、锡原子的固态互扩散,形成一定厚度的金属间化合物,实现了铜基板与锡基焊料的固态焊接。用扫描电子显微镜、透射电子显微镜和焊接强度测试仪器分别分析了铜锡焊接界面的显微形貌、化学成分以及剪切强度,获得了最佳焊接参数。结果表明,这种低温固态焊接方法可以获得良好的焊接效果。 A low temperature solid-state welding method based on needle-like copper based micro-nano materials was proposed. A surface needle-like copper based micro-nano array structure was prepared by electroless plating. The height of the copper needle array is 1-3 μm, and the root diameter is 1-2 μm. The tin-based solder was placed on the substrate with the morphology, and the contact area was welded under the conditions of a heating temperature of 190 ℃ and a pressure of 800 g. The hard copper pin structure is easy to be inserted into the soft tin-based solder to form mechanical interlock. The needle-like structure has a large surface area, which is conducive to the solid-state mutual diffusion of copper and tin atoms, forming intermetallic compounds with a certain thickness and realizing the solid-state welding of copper substrate and tin-based solder. The microscopic morphology, chemical composition and shear strength of Cu-Sn welding interface were analyzed by scanning electron microscope, transmission electron microscope and wel-ding strength tester, and the optimal welding parameters were obtained. The results show that the low temperature solid-tate welding method can obtain good welding effect.
作者 肖金 程伟 张彬 陈伟全 Xiao Jin;Cheng Wei;Zhang Bin;Chen Weiquan(Huali College,Guangdong University of Technology,Guangzhou 511325,China)
出处 《微纳电子技术》 CAS 北大核心 2021年第9期835-839,共5页 Micronanoelectronic Technology
基金 2019年广东省教育厅重点平台及科研项目特色创新项目(自然科学)(2019KTSCX224) 2021年度广州市科技计划基础与应用基础研究项目 2020年度增城区科技创新资金计划项目。
关键词 铜微纳米针 微纳米阵列结构 固态焊接 锡基焊料 电子封装 copper micro-nano needle micro-nano array structure solid-state welding tin-based solder electronic packaging
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  • 1TiensuuAL,SchweitzJA,JohanssonS.InsituinvestigationofprecisehighstrengthmicroassemblyusingAuSieutecticbond ing[].ThethInternationalConferenceonSolidStateSensorandActuatorsandEurosensorsIX.1995 被引量:1
  • 2Wolffenbuttel R F.Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond[].Sensors and Actuators.1997 被引量:1
  • 3Enikov T,Boyd J G.Electro-fluidic interconnects for chemical sensors[].Sensors and Actuators.2000 被引量:1
  • 4Grozea D,Bengu E,Marks L D.Surface phase for the Ag-Ge(111) and Au-Si(111) systems[].Surface Science.2000 被引量:1
  • 5Tiensuu A L,Bexell M,Schweitz J A.Assembling three-dimensional microstructures using gold-silicon eutectic bonding[].Sensors and Actuators.1994 被引量:1
  • 6Nurcan A,Nese E,Alexy A,et al.Electrical and structural properties of Cr ion-implanted thin Au films[].Materials Chemistry and Physics.1999 被引量:1
  • 7Hansen,M.,Anderko,K. Constitution of Binary Alloys . 1958 被引量:1
  • 8Chang P H,Berman G,Shen C C.Transmission electronic microscopy of gold-silicon interactions on the backside of silicon wafers[].Journal of Applied Physics.1988 被引量:1
  • 9Wolffenbuttel R F,Wise K D.Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature[].Sensors and Actuators.1994 被引量:1

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