摘要
基于Micro-Electro-Mechanical System(MEMS)工艺,采用双层谐振腔滤波结构,分析并设计了一种基于MEMS的硅基Substrate Integrated Waveguide(SIW)双通带宽带带通滤波器芯片。设计的滤波器芯片在21.25~29 GHz以及43~47.5 GHz双通带频带内插入损耗小于3 dB,相对带宽分别为30%以及10%,带外抑制度大于20 dB,并且在双通带间产生了零点,尺寸仅为4.2 mm×1.1 mm×0.8 mm。该滤波器是平面堆叠结构,具有体积小、频带宽、易集成等优点,有较好的应用价值。
This paper analyzes and designs a silicon based substrate integrated waveguide(SIW)dual passband broadband bandpass filter chip based on Micro-Electro-Mechanical System(MEMS)process with double layer resonant cavity filter structure.The designed filter chip has an insertion loss of less than 2 dB in the 23~29 GHz and 43~47 GHz dual passband bands with relative bandwidths of 23%and 9%,respectively,and an out-of-band suppression of more than 20 dB,and generates a zero point between the dual passbands with a size of only 4.2 mm×1.1 mm×0.8 mm.The filter is a planar stacked structure,with the advantages of small size,wide band and easy integration,which has good application value.
作者
濮泽宇
万晶
王霄
李跃华
梁晓新
Pu Zeyu;Wan Jing;Wang Xiao;Li Yuehua;Liang Xiaoxin(Nanjing University of Science&Techonlogy,Nanjing 210094,China;Institute of Microelectronic Technology of Kunshan,Kunshan 215347,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)
出处
《电子技术应用》
2021年第7期48-51,56,共5页
Application of Electronic Technique
