摘要
介绍了一种用于5G毫米波通信的高选择性基片集成波导(SIW)双频滤波器。采用金属通孔微扰SIW双层圆腔的方法设计了双频带通滤波器,分别使用TM10主模式和TM11高阶模式实现双频。利用金属通孔扰动TM21模式引入传输零点,使阻带之间具有高选择性,滤波性能更加良好。通过调节电耦合窗的半径,可以得到理想的通带插入损耗和通带带宽。同时,利用金属通孔间距的扰动来调节低通带的中心频率,而高通带的中心频率基本保持不变。低频段中心频率为28.4 GHz,相对带宽为6.7%,插入损耗为1.3 dB,高频段中心频率为39.1 GHz,相对带宽为8.2%,插入损耗为1.5 dB,两个通道的回波损耗均优于20 dB。
A substrate integrated waveguide(SIW)dual-band filter with high selectivity for 5 G millimeter-wave communication was introduced in this paper. Dual band-pass filter is designed by using metal-pass perturbation SIW double-layer circular cavity. TM10 main mode and TM11 high-order mode are used to achieve dual frequency. The metal through-hole disturbance TM21 mode is used to introduce the transmission zero point,so that the stopbands have high selectivity and the filtering performance is better. By adjusting the radius of the electric coupling window,the ideal insertion loss and passband bandwidth can be obtained. At the same time,the perturbation of the metal through hole spacing is used to adjust the center frequency of the low pass band,while the center frequency of the high pass band is basically unchanged. The center frequency of the low band is 28.4 GHz,the relative bandwidth is 6.7%,and the insertion loss is 1.3 dB. The center frequency of high band is 39.1 GHz,the relative bandwidth is 8.2%,and the insertion loss is 1.5 dB. The return loss of both channels is better than 20 dB.
作者
赵辉
刘太君
慕容灏鼎
刘庆
周挺
代法亮
ZHAO Hui;LIU Taijun;MURONG Haoding;LIU Qing;ZHOU Ting;DAI Faliang(Faculty of Electrical Engineering and Computer Science,Ningbo University,Ningbo,Zhejiang,315211,CHN;Shenzhen Institute of Inspection and Quarantine,Shenzhen,518000,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2021年第3期192-196,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目(U1809203,62071264)。
关键词
双频
基片集成波导
传输零点
滤波器
5G毫米波
dual-band
substrate integrated waveguide(SIW)
transmission zero
filter
5G millimeter-wave
