摘要
基于硅基65 nm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺,设计了一款工作频率为91.6~93.2 GHz的压控振荡器(Voltage Control Oscillator,VCO)。使用基于变压器结构的高品质因子电感改善了VCO电路的相位噪声,并采用金属氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)开关阵列和变容管共同实现了该VCO电路的频率调谐。VCO的输出信号通过电感的耦合线圈输出,降低了电路版图布版难度。仿真实验结果表明,提出的VCO电路的功耗为13.6 mW,调谐范围为1.6 GHz,输出功率大于-14.5 dBm,偏离振荡频率10 MHz处的相位噪声优于-107.7 dBc/Hz。
This paper introduces a 91.6~93.2 GHz Voltage Control Oscillator(VCO)in a 65 nm CMOS.A high-quality transformer-based inductor is presented to improve the phase noise of the VCO.Meanwhile,varactor and MOS switch array are adopted to improve the tuning range of the VCO.The coil is used to couple the output signal to the load.The post-layout simulation shows that the operating frequency of the proposed VCO is range from 91.6 GHz to 93.2 GHz.The output power is larger than-14.5 dBm in its operating frequency band.It is shown that phase noise at 10 MHz is better than-107.7 dBc/Hz.This VCO could be applied in the communication,radar,biological detection and other systems.
作者
李嵬
刘杰
吕金杰
刘军
苏国东
LI Wei;LIU Jie;LV Jinjie;LIU Jun;SU Guodong(Information Science Academy of CETC,Beijing 100086,China;Key Laboratory for RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China;State Key Laboratory of Millimeter Waves,Nanjing Jiangsu 210096,China)
出处
《杭州电子科技大学学报（自然科学版）》
2021年第4期13-18,39,共7页
Journal of Hangzhou Dianzi University：Natural Sciences
