摘要
基于65 nm CMOS工艺,设计了一种低相位噪声的压控振荡器。采用LC谐振回路,通过控制电压来改变电容的容值,达到振荡器输出频率可控的效果。仿真结果表明:在电源电压为1.2 V,控制电压在-3～3 V范围内变化时,振荡器的输出频率为139.4～149.3 GHz。振荡频率为140 GHz下,频偏1 MHz处的相位噪声为-91.83 dBc·Hz^(-1)。
Based on the 65 nm CMOS process,a voltage controlled oscillator(VCO)with low phase noise is designed.By controlling the voltage to change the capacitance of the capacitor,a LC resonant circuit is used to achieve a controllable effect of the oscillator output frequency.The simulation results show that the output frequency of the oscillator is 139.4~149.3 GHz when the power supply voltage is 1.2 V and the control voltage is changed within the range of-3~3 V.Under an oscillation frequency of 140 GHz,the phase noise at frequency offset 1 MHz is-91.83 dBc/Hz.
作者
朱玲
单奇星
胡成成
高海军
ZHU Ling;SHAN Qixing;HU Chengcheng;GAO Haijun(Key Laboratory for RF Circuits and Systems,Ministryof Education,Hangehou Dianzi Unicersity,Hangxhou Zhejiang 310018,China)
出处
《杭州电子科技大学学报（自然科学版）》
2019年第3期26-31,共6页
Journal of Hangzhou Dianzi University：Natural Sciences
基金
国家自然科学基金资助项目(61372021)
关键词
压控振荡器
低相噪
负阻
滤波
VCO
Low phase noise
Negative resistance
Filtering
