摘要
采用微波等离子体化学气相沉积法,分别在Si、Ti、Mo、Nb、Ta衬底表面沉积多晶金刚石膜,系统探究金刚石膜在不同衬底材料表面的生长行为。结果表明Si衬底表面金刚石形核期由纳米级金刚石晶粒和晶态石墨组成,随后是弥散分布的金刚石团簇生长聚集形成连续的膜层,使用较细粒度的金刚石微粉对衬底研磨处理可提高金刚石膜的致密性。Si衬底与金刚石膜之间存在晶态石墨,金刚石膜晶粒尺寸不足5μm;Ti、Mo、Nb、Ta衬底与金刚石膜之间均存在过渡金属碳化物,金刚石膜晶粒尺寸最大达到20μm。相对Ti、Mo、Nb衬底,Si和Ta衬底表面的金刚石膜生长较滞后,膜内存在较多的晶体缺陷与晶界,晶体结晶性较差,且Si和Ta衬底金刚石膜具有更低的热残余应力。
The polycrystalline diamond film is deposited on titanium,molybdenum,niobium,tantalum,and silicon substrates by microwave plasma chemical vapor deposition,and the growth behavior of the diamond film on the surface of different substrate materials has been systematically explored.The result shows that the diamond nucleation stage on the surface of the silicon substrate is composed of nano-scale diamond grains and crystalline graphite,and then the dispersed diamond clusters grow and aggregate to form a continuous film.The use of finer grained diamond powder for grinding treatment can improve the compactness of the diamond film.Crystalline graphite exists between the silicon substrate and the diamond film,and the diamond film has a crystal grain size of less than 5μm.Transition metal carbides exist between the titanium,molybdenum,niobium,tantalum substrates and the diamond film,and the diamond film has a maximum crystal grain size of 20μm.Compared with titanium,molybdenum,and niobium substrates,the growth of diamond film on silicon and tantalum substrates lags behind,and there are many crystal defects and grain boundaries in the film,with poor crystal crystallinity.In addition,the silicon and tantalum substrate diamond films have lower thermal residual stress.
作者
徐帅
吴晓磊
康世豪
闫建明
吴啸
蔡玉珺
周文涛
曹博伦
XU Shuai;WU Xiaolei;KANG Shihao;YAN Jianming;WU Xiao;CAI Yujun;ZHOU Wentao;CAO Bolun(Zhengzhou Research Institute for Abrasives & Grinding Co., Ltd., Zhengzhou 450001, China)
出处
《超硬材料工程》
CAS
2020年第6期1-8,共8页
Superhard Material Engineering
关键词
金刚石膜
化学气相沉积
衬底材料
生长行为
diamond film
chemical vapor deposition
substrate material
growth behavior
