摘要
介绍了一种用于高功率高速GaN功率开关的全GaN栅驱动电路。该电路主要基于两个常开型GaN HEMT和一个自偏置电阻。根据该拓扑结构的门限效应,提出了集成脉冲宽度调制功能的全GaN栅极驱动器。使用两个6 W的GaN HEMT搭建该驱动器,并将其输出连接到一个45 W GaN功率开关的栅极,形成一个DC/DC升压转换器的低侧开关,并进行实验验证。实验结果表明,在20%~80%占空比下,电路具有低损耗(约1 W)和高达60 MHz的开关工作频率,测得的方波开关时间达到了纳秒级。该研究结果为GaN功率开关及驱动器进一步使用微波单片集成电路(MMIC)工艺进行全集成提供了理论依据和实测数据。
A full GaN gate driver circuit for high power and high speed GaN power switches was introduced,which was mainly based on two normally-on GaN HEMTs and a self-biasing resistor.According to the threshold effect of the presented topology,a full GaN gate driver with integrated pulse width modulation function was proposed.Two 6 W GaN HEMTs were used to build the driver,and its output was connected to the gate of a 45 W GaN power switch to form a low-side switch of a DC/DC boost converter for experimental verification.The experimental results show that the circuit has low consumption(about 1 W)and high switching operation frequency up to 60 MHz over the 20%-80%duty cycle range.And the measured square wave switching time reaches nanoseconds.This research result provides theoretical basis and measured data for further full integration of GaN power switches and drivers using monolithic microwave integrated circuit(MMIC)process.
作者
赵永瑞
贾东东
史亚盼
吴志国
李俊敏
赵光璞
师翔
Zhao Yongrui;Jia Dongdong;Shi Yapan;Wu Zhiguo;Li Junmin;Zhao Guangpu;Shi Xiang(North-China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China;The 13 th Research Institute,CETC,Shijiazhuang 050051,China;Key Laboratory of Radio Frequency Integrated Circuit for Mobile Communication in Hebei Province,Shijiazhuang 050200,China)
出处
《半导体技术》
CAS
北大核心
2020年第11期863-866,共4页
Semiconductor Technology
基金
河北省2019新一代信息技术研发及产业化专项资助项目(冀工信明传[2018]135号)。
