摘要
通过微电子加工工艺,制备出具有ITO/TaO_x/AlO_x/Ti结构的双介质层阻变存储器.器件中引入的氧化铝介质层有效地减小了器件的运行电流,降低了高/低阻态间切换所需的功耗,并增大了高/低阻态电阻比值.研究表明,器件的高低态电阻与其切换电压均有良好的稳定性和均匀性,且器件表现出可靠的擦写性能与保持性能.进一步研究表明,器件高阻态导电受肖特基发射机制主导,低阻态导电受空间电荷限制机制主导.器件还具有连续可调的电阻渐变行为,利用反复电脉冲刺激下的器件电阻变化来表征突触的权值,可以模拟突触行为.
The bilayer resistive random access memory with ITO/TaO_x/AlO_x/Ti structure was prepared by micro-fabrication process. The introduced alumina dielectric layer effectively reduces the operating current and the power consumption to complete switching between resistance states. It also increases resistance ratio of the high/low resistance states. Furthermore, the TaO_x/AlO_x double-layer device presents good stability and uniformity in resistance and switching voltage and the device has reliable endurance and retention. Further research shows that conduction in the high resistance state is dominated by Schottky emission mechanism while the conduction in the low resistance state is dominated by space charge limited current. The device also exhibits gradually adjustable resistance switching behavior. The tunable device resistance upon repeated electrical impulses is able to characterize the synaptic weight and simulate the behavior of biological synapses.
作者
宫泽弘
周海芳
赖云锋
GONG Zehong;ZHOU Haifang;LAI Yunfeng(College of Physics and Information Engineering,Fuzhou University,Fuzhou,Fuiian 350108,China)
出处
《福州大学学报（自然科学版）》
CAS
北大核心
2020年第4期458-463,共6页
Journal of Fuzhou University(Natural Science Edition)
基金
福建省自然科学基金资助项目(2019J01218)。
关键词
阻变存储器
氧化钽/氧化铝薄膜
低功耗
开关比
突触器件
resistive random access memory
TaO_x/AlO_x bilayer
low power
on/off ratio
synaptic device
