摘要
A new device has been realized using flip-chip joining two printed circuit boards(PCBs) on which zinc oxide(ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I-V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source.
A new device has been realized using flip-chip joining two printed circuit boards (PCBs) on which zinc oxide (ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I - V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source.
基金
the UK Leverhulme Trust, College of Engineering and Department of Research and Innovation of Swansea University for financial support
