摘要
针对铜柱穿透硅通孔(through silicon via,TSV)结构的热机械可靠性,进行退火工艺对其影响的有限元分析研究.介绍了基于聚酰亚胺(Polyimide,PI)介质层的TSV结构的加工工艺.比较了在400℃退火温度,保温退火30 min条件下,PI和SiO2分别作为介质层时TSV结构的Von Mises应力及Cu胀出高度的分布.在此基础上,进一步针对PI-TSV结构分别对其尺寸参数(介质层厚度以及TSV直径、高度、间距)和退火工艺参数(退火温度、时间)进行变参分析.结果表明,与SiO2-TSV相比,PI-TSV结构退火后具有更好的热机械可靠性,并且适当增加介质层厚度是降低退火后PI-TSV结构的Cu胀出高度和以及热应力的有效方法.
In this paper,a finite element analysis method was used to study the influence of annealing process on the thermo-mechanical reliability of Cu through-silicon via structure.Firstly,the processing technology of TSV structure with polyimide(PI)dielectric layer was introduced.Then,Von Mises stress distribution and Cu protrusion height of TSV structure,which used PI and SiO2 as the dielectric layer respectively,were compared under 400℃for 30 min.On this basis,the parameters of PI-TSV were analyzed further,including size parameters of TSV(the thickness of dielectric layer and TSV diameter,height,pitch)and annealing process parameters(annealing temperature and time).The results show that,compared with SiO2-TSV,PI-TSV structure possesses better thermo-mechanical reliability after annealing,and it is an effective method for the Cu protrusion height and thermal stress reduction to appropriately increase the thickness of PI dielectric layer.
作者
丁英涛
陈志伟
程志强
王一丁
DING Ying-tao;CHEN Zhi-wei;CHENG Zhi-qiang;WANG Yi-ding(School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China)
出处
《北京理工大学学报》
EI
CAS
CSCD
北大核心
2020年第5期519-525,共7页
Transactions of Beijing Institute of Technology
基金
国家自然科学基金资助项目(61574016,61774015)。
关键词
三维集成技术
硅通孔
聚酰亚胺
有限元仿真
热机械可靠性
three-dimensional integrated technology
silicon through via
polyimide
finite element simulation
thermo-mechanical reliability
