摘要
随着电子封装持续向小型化、高性能的方向发展,基于硅通孔的三维互连技术已经开始应用到闪存、图像传感器的制造中,硅通孔互连技术的可靠性问题越来越受到人们的关注。将硅通孔互连器件组装到PCB基板上,参照JEDEC电子封装可靠性试验的相关标准,通过温度循环试验、跌落试验和三个不同等级的湿度敏感性测试研究了硅通孔互连器件的可靠性。互连器件在温度循环试验和二、三级湿度敏感试验中表现出很好的可靠性,但部分样品在跌落试验和一级湿度敏感性测试中出现了失效。通过切片试验和扫描电子显微镜分析了器件失效机理并讨论了底部填充料对硅通孔互连器件可靠性的影响。
With the development of IC packaging to aim to smaller size and higher performance,3D integration based on through silicon via（TSV）interconnect technology is applied to the flash and image sensor.More and more attention is paid to the reliability of through silicon via interconnect technology.TSV samples were assembled on PCB board and the reliability was evaluated by temperature cycling test（TCT）,drop test and moisture sensitivity level test according to the JEDEC standards for electronic assembly.The reliability was evaluated under TC,drop test and moisture sensitivity level 1 to 3（MSL1-3）.TC,MSL2 and MSL3 results showed no failure.However,a part of samples failed in drop test and MSL1.The failure mechanism was analyzed by cross-section and scanning electron microscope,and the influence of underfill on the reliability of the TSV devices was discussed.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第9期684-688,共5页
Semiconductor Technology
基金
国家科技重大专项资助(2009ZX02025)
