摘要
基于寻求目前流行的TTL与非门74LS00真实输出低电平伏安(VOL-IOL)特性与模型的目的,通过实测4个厂家的四与非门SN74LS00N的VOL-IOL特性,结合对四家芯片的各门在不同逻辑状态下的电源电流变化实测和理论计算,得出了各厂家的SN74LS00N芯片的内部两个关键电阻阻值R1,2、最低输出低电平电压VOL0(低电平负载驱动管T5是否真为肖特基三极管)、低电平输出等效内阻ROL,说明了各厂家芯片的低电平驱动负载能力有显著差异,该实际的定量结果这有利于大学课堂教学和相关电子工程设计。
Based on the purpose of seeking real output low-level volt-ampere property(VOL-IOL)and models of the current popular TTL 74 LS00 NAND gate,through measuring the VOL-IOL data of SN74 LS00 N fourNAND gate chips manufactured by four companies,combined with the measurement of the power current under different logic states and related theoretical calculations,the values of two key resistors R1,2 on the chips,the lowest output low-level voltage VOL0(whether the low-level load drive transistor T5 is really a Schottky triode) and the equivalent internal resistance ROL of each SN74 LS00 N chip are obtained, which shows that there is a significant difference between the low-level driving load capabilities of four chips. This actual quantitative result is beneficial to university classroom teachings and related electronic engineering designs.
作者
刘晓东
涂丽平
LIU Xiao-dong;TU Li-ping(School of Physical Science and Technology,Tianjin Polytechnic University,Tianjin 300387,China;Engineering Teaching Practice Training Center,Tianjin Polytechnic University,Tianjin 300387,China)
出处
《电子设计工程》
2020年第3期115-119,共5页
Electronic Design Engineering
基金
教育部留学归国人员科研启动基金(第48批)。
