摘要
为了了解各厂家晶体管-晶体管逻辑(TTL)74LS00与非门芯片输入特性,以利于电子设计应用和大学教学的目的,采用由"二极管(D)串联电阻(R)系统"的总伏安特性提取内部参数法,结合实测12家74LS00与非门芯片的电源(VCC)与输入端A的伏安特性、正常输入端伏安特性和电压传输等特性,确定了不同芯片的输入钳位二极管(D1)的属性:8家的D1确实为肖特基势垒二极管,而4家的D1为典型的硅基二极管,但采用了硅基三极管倒置的结构,以提高允许的最低输入电压范围.同时,比较自洽而准确地导出了各上拉电阻(R1)的阻值,测量值为16.5~27.6 kΩ,标准值为20.0 kΩ,以推测芯片内部其他电路参数.
To full understand the input properties of the trannistor-transistor logic(TTL)74 LS00 NAND-gate chips made by various manufacturers to facilitate the electronic design application and the purpose of university teaching,the internal parameter extraction method based on the total volt-ampere property of"a diode(D)series resistance(R)system"is adopted,combined with measuring the volt-ampere property between the chip’s power supply(VCC)and input pin A,the normal input volt-ampere property and the voltage transfer property of 74 LS00 NAND-gate chips made by 12 manufacturers,to determin the properties of input clamp diode D1.The research results show that 8 clamp diodes D1 are really Schottky barrier diodes,while the D1 of 4 companies are typical siliconbased diodes,but the inverted structure of silicon-based diodes is adopted to improve the allowable minimum input voltage range.At the same time,the resistance values of each pull-up resistor R1,ranging from 16.5-27.6 kΩ,while the standard value is 20.0 kΩ,which are derived more accurately and self-consistently,which lays a foundation for speculating other circuit parameters inside the chip.
作者
刘晓东
何松亚
LIU Xiaodong;HE Songya(School of Physical Science and Technology,Tiangong University,Tianjin 300387)
出处
《首都师范大学学报（自然科学版）》
2021年第2期26-31,共6页
Journal of Capital Normal University：Natural Science Edition
基金
国家教育部留学回国人员科研启动基金(第48批)。
