摘要
六方氮化硼(h-BN)二维原子晶体以其独特的结构、优异的性质以及广泛的应用前景引起了人们的普遍关注。高质量h-BN材料的制备是其性质研究与实际应用的前提。机械剥离的h-BN尺寸有限,普遍采用的化学气相沉积(CVD)技术通常以过渡金属为衬底,器件应用时需要将h-BN转移到其它衬底上。因此,在介质衬底上直接生长h-BN成为二维材料研究领域的一个重要发展方向。本文总结了近年来介质衬底(包括:Si基衬底、蓝宝石衬底和石英衬底等)上直接生长h-BN二维原子晶体的主要进展。人们采用CVD、金属有机气相外延法(MOVPE)、物理气相沉积法(PVD)等方法,通过提高生长温度、衬底表面处理、两步生长等工艺实现了介质衬底上直接生长h-BN。此外,还介绍了介质衬底上h-BN二维原子晶体的主要应用。
In recent years,hexagonal boron nitride(h-BN)two-dimensional(2D)atomic crystal has attracted consid-erable attention due to its unique structure,novel property and potential applications.The synthesis of high quality h-BN determines how far we can go for property research and practical applications.However,the sizes of h-BN do-mains obtained by mechanical exfoliation were limited to several micrometers.Transition metal substrates are usually used in the CVD growth of 2D h-BN layers,and thus a transfer process is required for fabricating h-BN-based elec-tronic devices.Therefore,it is strongly desirable to directly synthesize 2D h-BN on dielectric substrates.In this article,we review recent process on the direct growth of h-BN by CVD,MOVPE,PVD on different dielectric substrates,in-cluding silicon-based substrates,sapphire,quartz,etc.Several approaches,such as,increasing substrate temperature,oxide-assisted nucleation,and surface nitridation were adopted to directly grow h-BN on dielectric substrates.Besides,we also summarized the main applications of 2D h-BN grown on dielectric substrates.
作者
张兴旺
高孟磊
孟军华
ZHANG Xing-Wang;GAO Meng-Lei;MENG Jun-Hua(Key Lab of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《无机材料学报》
SCIE
EI
CAS
CSCD
北大核心
2019年第12期1245-1256,共12页
Journal of Inorganic Materials
基金
国家重点研发计划(2018YFB0406503)
国家自然科学基金(61674137,61874106)
北京市自然科学基金(4184101)~~
