摘要
Chemical vapor deposition （CVD） synthesis of large-domain hexagonal boron nitride （h-BN） with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to -72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate： the Cu （111） face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.
有一致厚度的大域的六角形的硼氮化物(h-BN ) 的化学蒸汽免职(CVD ) 合成是很挑战性的，主要由于这材料的极其高的成核密度。此处，我们报导晶片规模的成功的生长，有大单人赛水晶的领域尺寸的高质量的 h-BN 单层电影，吗直到~ 72 ??????????????????????????慮潮档湡敮獬???????慮潮畴敢??洠獥灯牯???? ？？
基金
Acknowledgements The work was supported by the National Natural Science Foundation of China （Nos. 51432002, 50121091, 51290272, and 51222201）, the National Basic Research Program of China （Nos. 2013CB932603, 2012CB933404, 2011CB933003, 2011CB921903, and 2012CB921404）, and the Ministry of Education （No. 20120001130010）.
