摘要
为解决电子元器件辐射效应中测量器件X射线吸收剂量的问题,本文采用Geant4蒙特卡洛程序模拟计算X射线在水模体与硅模体中的吸收剂量,得到硅与水的吸收剂量转换因子.计算结果表明:在X射线管电压为60 kV的连续能谱下,硅吸收剂量与水吸收剂量的转换因子为6.929.此结果与质能吸收系数转换方法算出的结果符合得很好,表明此计算方法是可行的,为电子元器件X射线辐射效应的研究奠定了基础.
In order to solve the problem of X-ray absorbed dose of measuring device in the radiation effect of electronic components, this paper uses Geant4 Monte Carlo program to simulate the absorbed dose of X-ray in water phantom and silicon phantom, and obtain the absorbed dose conversion factor of silicon and water. The calculation results show that under the continuous energy spectrum of X-ray tube voltage of 60 kV, the conversion factor of silicon absorbed dose and water absorbed dose is 6.9290. This result is in good agreement with the calculated result of mass energy absorption coefficient conversion method, indicating that this calculation method is feasible and lays a foundation for the study of X-ray radiation effects of electronic components.
作者
王万俊
陆妩
荀明珠
于刚
王倩
WANG Wanjun;LU Wu;XUN Mingzhu;YU Gang;WANG Qian(School of Physics Science and Technology,Xinjiang University,Urumqi Xinjiang 830046,China;Xinjiang Institute of Physics and Chemistry,Chinese Academy of Sciences,Urumqi Xinjiang 830046,China;Xinjiang Key Laboratory of Electronic Information Materials and Devices,Urumqi Xinjiang 830046,China)
出处
《新疆大学学报（自然科学版）》
CAS
2019年第4期432-436,共5页
Journal of Xinjiang University(Natural Science Edition)
基金
国家自然科学基金地区项目(No.11765022)
