摘要
为了获得高效率的AlGaN基深紫外发光二极管,提出了具有渐变量子垒的氮极性结构来调控载流子的传输.通过氮极性结构在p型电子阻挡层中形成的反向极化诱导势垒,改善空穴注入和电子泄漏问题.另外研究了不同的渐变方向和渐变程度对器件性能的影响.模拟结果显示,在12nm的AlGaN量子垒上沿着(000-1)方向从Al组分0.65线性渐变到0.6,可以有效平衡量子垒的势垒高度和斜率,从而极大的增强空穴注入,光输出功率相较于传统结构提高了53.6%.该设计为电子泄漏和空穴注入问题提供了直接而有效的解决方案,在实现更高效率的深紫外发光二极管方面显示出广阔的前景.
To achieve efficient AlGaN-based Deep Ultraviolet Light-Emitting Diode (DUV LED),the N-polar LED structure with grading quantum barriers is proposed to manipulate the carrier transport.By adopting the N-polar structure,the hole injection and the electron overflow issues can be improved due to the reversed polarization-induced potential barrier for carrier transport in p-type electron blocking layer.Furthermore,the impacts of different grading directions and schemes on the device performance are investigated.Simulation results show that grading the Al composition linearly from 0.65 to 0.6 for the 12 nm-thick AlGaN quantum barriers along the (000-1) can well balance the quantum barrier height and slope,thus resulting in remarkable improvement of hole injection as well as 53.6% enhancement of optical output power.The proposed design provides a straightforward and effective solution to the electron overflow and hole injection issues,which shows promise in the pursuit of higher efficiency DUV LED.
作者
陆义
闫建昌
李晓航
郭亚楠
吴卓辉
张亮
谷文
王军喜
李晋闽
LU Yi;YAN Jian-chang;LI Xiao-hang;GUO Ya-nan;WU Zhuo-hui;ZHANG Liang;GU Wen;WANG Jun-xi;LI Jin-min(Research and Development Center for Solid-State Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application,Beijing 100083,China;Advanced Semiconductor Laboratory,King Abdullah University of Science and Technology,Thuwal 23955-6900,Saudi Arabia)
出处
《光子学报》
EI
CAS
CSCD
北大核心
2019年第7期42-53,共12页
Acta Photonica Sinica
基金
The National Key Research and Development Program of China(Nos.2016YFB0400803,2016YFB0400802,2017YFB0404202)
the National Natural Sciences Foundation of China(Nos.61527814,61674147,U1505253)
Beijing Nova Program(No.Z181100006218007)
Youth Innovation Promotion Association CAS(No.2017157)
King Abdullah University of Science and Technology(KAUST)Baseline(No.BAS/1/1664-01-01)
KAUST Competitive Research Grant(Nos.URF/1/3437-01-01,URF/1/3771-01-01)
KAUST GCC(No.REP/1/3189-01-01)
National Natural Science Foundation of China(No.61774065)
关键词
深紫外LED
ALGAN
氮极性
渐变量子垒
载流子调控
Deep Ultraviolet Light-Emitting Diode(DUV LED)
AlGaN
N-polar
Grading quantum barrier
Carrier manipulation
