摘要
对物理气相传输法(PVT)生长的AlN单晶进行了性质表征,研究了单晶中的杂质和缺陷、发光性质和晶体结构等,结果表明该AlN单晶具有较高的晶体质量。用蓝宝石陪片辅助方法对AlN单晶进行了化学机械抛光,得到了厚度均匀、具有器件质量表面的AlN单晶片。利用MOCVD在AlN单晶片上外延了Al组分约为18.2%的AlGaN薄膜,其生长模式符合StranskiKrastanow模式。利用应变梯度模型解释了AlGaN外延层中应变状态和表面裂纹的形成机制。
The structural and optical properties of single-crystal AlN prepared by physical vapor transport(PVT) method were studied. The results show that PVT-AlN single crystal has high quality. AlN samples with the uniform thickness and device-quality surfaces have been obtained by a sapphire-aided CMP method. AlGaN epi-layers with the Al content of 18.2% have been grown on CMP-AlN substrates by metal-organic chemical vapor deposition(MOCVD). The tensile stress in nominally compressed AlGaN layer and the formation mechanism of surface cracks are explained by strain gradients model.
作者
付润定
庄德津
修向前
谢自力
陈鹏
张荣
郑有炓
FU Runding;ZHUANG Dejin;XIU Xiangqian;XIE Zili;CHEN Peng;ZHANG Rong;ZHENG Youdou(School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,Jiangsu,China;Qingdao AI-Ga Photoelectric Semiconductor Co.,Ltd.,Qingdao 266105,Shandong,China)
出处
《陶瓷学报》
CAS
北大核心
2018年第6期690-695,共6页
Journal of Ceramics
基金
国家重点研发计划资助项目(2017YFB0404201)
固态照明与节能电子学协同创新中心
江苏高校优势学科建设工程资助项目
国网山东电力公司技术开发基金
