摘要
为了探究具有双层电子阻挡层设计的GaN基黄光LED中首层电子阻挡层(EBL-1)Al组分对内量子效率的影响以及其中载流子注入的主要物理机制,首先使用硅衬底GaN基黄光LED外延与芯片工艺,在外延过程中通过控制三甲基铝(TMAl)流量,分别获得EBL-1含有Al组分约20%、50%、80%的硅衬底GaN基黄光LED;随后使用半导体仿真软件Silvaco Atlas对这3种样品的实际测试内量子效率曲线进行拟合。结果表明,EBL-1中Al组分对内量子效率的影响主要体现在两方面:一是EBL-1的Al组分越高越有利于空穴从V形坑侧壁注入到多量子阱有源区;二是EBL-1中过高的Al组分会降低p型GaN晶体质量,导致空穴浓度下降;综合表现为Al组分约50%的EBL-1在这种双层电子阻挡层的设计下最有利于提高硅衬底GaN基黄光LED的内量子效率。
This study was to investigate the dependence of internal quantum efficiency of GaN-based yellow light-emitting diodes(LEDs)with Si substrate on the Al composition of first electron blocking layer(EBL-1)in dual electron blocking layer design and the main physical mechanism of carrier injection.First,three samples were prepared by the technology of GaN-based yellow LEDs on silicon substrates with different flows of trimethyl aluminum(TMAl)during epitaxy.As a result,the Al composition in EBL-1 of the samples was about 20%,50%and 80%,respectively.Then,the actual tested internal quantum efficiency curves of these three samples were fitted by the semiconductor simulation software Silvaco Atlas.The results show that EBL-1 in dual electron blocking layer design has two main influences on the internal quantum efficiency.One is that EBL-1 with a higher Al composition allows more holes to be injected from the sidewall of the V-shaped pits into the multiple quantum wells,and the other is that excessive aluminum composition reduces the quality of p-type GaN layers,resulting in a decrease in the effective concentration of holes.As a comprehensive performance,the EBL-1 with about 50%Al composition is the most benefit in dual electron blocking layer design to the internal quantum efficiency of GaN-based yellow LEDs.
作者
胡耀文
高江东
全知觉
张建立
潘拴
刘军林
江风益
HU Yao-wen;GAO Jiang-dong;QUAN Zhi-jue;ZHANG Jan-li;PAN Shuan;LIU Jun-lin;JIANG Feng-yi(National Institute of LED on Silicon Substrate,Nanchang University,Nanchang 330096,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2019年第9期1102-1107,共6页
Chinese Journal of Luminescence
基金
国家重点研发计划项目(2016YFB0400600,2016YFB0400601)
国家自然科学基金(11674147)
江西省重点研发计划(20171BBE50052)资助项目~~
关键词
GAN
黄光LED
电子阻挡层
半导体仿真
GaN
yellow LED
electron-blocking layer
technology computer aided design(TCAD)
