摘要
在红外探测领域,InSb材料已经大规模地被用于制造3~5μm波长范围的焦平面阵列探测器。对更大规模、更高性能探测器的需求日益增长,而该类探测器需要在更大尺寸、更高质量的晶片上制备。所以,对4 in InSb晶片加工技术进行了研究。通过优化研磨、抛光工艺参数,最终获得总厚度偏差小于等于10μm、翘曲度小于等于20μm、表面粗糙度小于1 nm、表面质量优的4 in InSb晶片,提高了加工效率,能够满足大规模高质量红外焦平面探测器的使用需求。
In the field of infrared detection, InSb materials have been widely used to fabricate focal plane array detectors in the wavelength range from 3 to 5 microns. There is a growing demand for larger, higher performance detectors that need to be fabricated on larger, higher quality wafers.Therefore, the processing technology of 4-inch InSb wafers is studied. By optimizing the grinding and polishing parameters, 4-inch InSb wafers with a total thickness deviation of 10 μm or less, a warpage of 20 μm or less, a surface roughness of less than 1 nm, and excellent surface quality were obtained, which improves processing efficiency and can satisfy the need to use large-scale high-quality infrared focal plane detectors.
作者
赵超
徐鹏艳
孔忠弟
彭志强
王小龙
庞新义
ZHAO Chao;XU Peng-yan;KONG Zhong-di;PENG Zhi-qiang;WANG Xiao-long;PANG Xin-yi(North China Research Institute of Electro-Optics, Bejing 100015, China)
出处
《红外》
CAS
2019年第4期18-24,共7页
Infrared
