摘要
通过对室温工作的光导型锑化锢红外探测器的设计与工艺研究，在理论分析和工艺实验的基础上，优选制造灵敏元的材料，精心设计探测器的光学系统，改进制造工艺，实现对汞敏元精密腐蚀的有效控制等。研制成功的电压响应率达10^3V／W，黑体探测率达10^10cm·Hz^1/2·W^-1左右，光谱响应范围2～8μm，响应时间≤2×10^-8s的高性能、高稳定、高可靠器件。
Based on the principle design of photoconductive InSb IR detector using in ambient temperature and the research of technological process,considering the theory and the practice, materical of sensitive unit, optical system, and technological process are optimized. Effective control of accurate corrosion of the sensitive unit is realized. Experimental achievements are as follows ： voltage responsity reachs 103 V/W,detectivity can reach around 10^10 cm · Hz^1/2 · W^-1 ,spectral responsity rangs from 2 μm to 8 μm, time constant is less than 2 × 10^-8 s. Qualified appliance of InSb IR detector is finally maufactured.
出处
《现代电子技术》
2007年第2期182-183,191,共3页
Modern Electronics Technique
关键词
室温
锑化锢
探测器
高灵敏度
ambient temperature
InSb
detector
high sensitivity
