摘要
化学机械抛光(CMP)技术作为目前唯一可提供在整个晶圆片上全面平坦化的工艺技术,已被越来越广泛地应用到了半导体领域。通过了解化学机械抛光(CMP)技术原理,分析出影响晶片抛光质量的主要因素基础上开发了超精密砷化镓晶片抛光机。重点介绍了该抛光机结构组成,及其研制的关键技术和创新点。
Chemical mechanical polishing （CMP） technology as the only currently available on the entire wafer global planarization technolo- gy, has been more and more widely applied to the field of semiconductors.By understanding the chemical mechanical polishing （CMP） tech- nology principle, based on the analysis of the main factors to affect the quality of wafer polishing developed nltra-precision GaAs wafer pol- ishing machine. Highlights of the polishing machine structure, and its development of key technology and innovation.
出处
《机电产品开发与创新》
2013年第4期8-10,共3页
Development & Innovation of Machinery & Electrical Products
基金
科技型中小企业创新基金(11C26215305878)
关键词
化学机械抛光(CMP)
纳米级抛光
下压力
温度控制
the chemical mechanical polishing （CMP）
nanoscale polishing
downward pressure
temperature control
