摘要
基于0.25μm GaN工艺和以SiC为衬底的高电子迁移率晶体管(HEMT)技术,采用电抗匹配、优化电路的静态直流工作点、三级放大结构栅宽比1:3.6:16等措施,保证电路的增益和功率指标,实现了C波段高功率、高增益和高效率的宽带单片微波集成电路(MMIC)放大器。芯片测试结果表明,在4～8 GHz频率范围内,漏极电压28 V,连续波条件下,放大器的小信号增益大于30 dB,大信号增益大于23 dB,饱和输出功率大于44 dBm,功率附加效率为38%～45%。该单片放大器芯片尺寸为3.6 mm×4.0 mm。
Based on the 0.25 μm GaN technology and High Electron Mobility Transistor(HEMT) on SiC substrate, a high power, high gain and high efficiency C-band broadband Monolithic Microwave Integrated Circuit(MMIC) amplifier is developed. The gain and the output power index of the circuit are guaranteed by means of reactance matching, optimizing the static DC working point of the circuit, and selecting the gate width ratio of the three-stage amplifier 1:3.6:16. The test results show that the chip in 4–8 GHz frequency range, the drain voltage 28 V, under continuous wave condition, the small signal gain of the MMIC is greater than 30 dB, the large signal gain is greater than 23 dB, the saturation output power is greater than44 dBm, the power added efficiency is 38% to 45%. The size of the MMIC is 3.6 mm×4 mm.
作者
刘帅
蔡道民
武继斌
LIU Shuai;CAI Daomin;WU Jibin(13th Institute of China Electronic Technology Group Corporation,Shijiazhuang Hebei 050051,China)
出处
《太赫兹科学与电子信息学报》
北大核心
2019年第2期248-251,257,共5页
Journal of Terahertz Science and Electronic Information Technology
关键词
GAN高电子迁移率晶体管
高功率放大器
宽带
功率附加效率
GaN High Electron Mobility Transistor
high power amplifiers
broad band
Power Additional Efficiency(PAE)
