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一种适用于GaN器件的谐振驱动电路 被引量:4

A resonant gate driver circuit for GaN device
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摘要 针对氮化镓(GaN)器件,传统的驱动电路是电压源型驱动,在高频下充放电回路中的寄生电感会引起栅源电压振荡,超过GaN器件的栅源耐压值,损坏GaN器件。采用谐振驱动(RGD)电路是解决上述传统驱动存在的问题的有效途径之一,利用LC谐振,在GaN器件开通和关断时提供一条低阻抗箝位路径,减小栅源电压的振荡,提供一个稳定的栅源电压。详细分析了RGD电路的工作原理,同时设计制作了1 MHz的Boost变换器原理样机,并给出了实验结果。 GaN devices are traditionally driven by the voltage source circuit,and could be easily damaged when the gate-source voltage of GaN device oscillates and exceeds the maximum withstanding voltage owing to the parasitic inductance in charge and discharge circuit under high-frequency operation.RGD(Resonant Gate Driver)circuit represents an effective approach to solve the problem of oscillation of the gate-source voltage.A low impedance clamped path can be obtained using LC resonance when GaN devices are turned on and off,which can reduce the oscillation of gate voltage and provide a stable gate voltage.The working principle of RGD circuit is described in detail.Meanwhile,a prototype of 1 MHz Boost converter is designed and the experimental results are provided.
作者 赵清林 陈磊 袁精 王玉洁 ZHAO Qinglin;CHEN Lei;YUAN Jing;WANG Yujie(Key Laboratory of Power Electronics for Energy Conservation and Motor Drive of Hebei Province,College of Electrical Engineering,Yanshan University,Qinhuangdao 066004,China)
出处 《电力自动化设备》 EI CSCD 北大核心 2019年第4期114-118,共5页 Electric Power Automation Equipment
基金 光宝科技电力电子技术科研基金资助项目(PRC-20151384)~~
关键词 GAN器件 谐振门极驱动 高频变换器 栅极驱动 GaN device resonant gate driver high frequency converter gate driver
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