摘要
采用溶胶 凝胶方法制备ITO膜 ,并从制备工艺上研究了各种因素对ITO膜光电特性的影响 最后制出的ITO膜厚度约为 5 0nm ,在可见光区平均透射比达 97% ,最高达 99.5 5 % ,电阻率在 2 .0Ω·cm左右 ,最低达到 0 .
The thin films of indium tin oxide (ITO) are applied extensively because of their high transparency (95% transmittance between 400nm and 600nm, 300nm thickness) and low electrical resistivity (the lowest around 10 -3 Ω·cm, 300nm thickness). Transparent and conductive ITO films had been prepared by the sol gel process, and the effects of every factor on the optical and electrical properties of the files had been investigated during the process. Optical transmittance of around 97% was observed in the visible region of the 50nm thick films, the maximum transmittance value was 99.55%. Resistivities of 2.0Ω·cm were obtained and the minimum resistivity value was 0.31Ω·cm.
出处
《光子学报》
EI
CAS
CSCD
北大核心
2002年第9期1077-1080,共4页
Acta Photonica Sinica
