摘要
本文介绍的Cu CMP实验中的磨料粒子是纳米硅溶胶 (SiO2 ,2 0～ 30nm)。为得到高质量、高平整度的铜表面 ,采用SiO2 溶胶抛光液对铜进行抛光实验 ,在给定的条件下 ,得到了磨料粒子的浓度与抛光速率间的机械作用曲线。实验结果表明 :当SiO2 溶胶浓度增大时 ,机械作用增强 ,抛光速率随之增加。当SiO2 溶胶浓度控制在一定范围 ,使抛光表面在低表面张力下进行抛光时 ,抛光后的液体呈蓝色 ,抛光后的铜表面光亮无划伤 。
It was introduced that colloidal silica (SiO\-2, 20～30 nm) was used for abrasive particles in Cu CMP experiments. In order to gained a copper surface of high quality and unknit, the experiments that copper was polished using colloidal silica slurry on fixed conditions were done, in which the curve of mechanical reaction between the concentration of abrasive particles and polishing rate was found. It was shown that the mechanical action was increased with adding silica abrasive concentration, as well as the polished rate was increased. When silica abrasive concentration was controlled in the specified range and the copper′s surface was polished under the given low surface tension condition, it was observed that the color of post polished slurry was blue, and a non scratched and a bright copper surface was shown.
出处
《电子器件》
CAS
2002年第3期220-223,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金资助项目 (批准号 :60 1760 3 3 )
天津市自然科学基金资助项目(项目编号 :0 13 60 5 911)
