摘要
以磨料白炭黑、氧化剂H2O2、有机碱三乙醇胺、分散剂聚乙二醇为原料,通过正交设计的方法配制一系列抛光液,通过四甲基氢氧化铵调节抛光液的pH值为12,然后在研磨抛光机上对铜片进行超声波精细雾化化学机械抛光(CMP)。对抛光盘转速与材料去除率的关系进行了研究,并对传统抛光和雾化抛光效果进行了对比。试验结果表明,分散剂、白炭黑、有机碱、氧化剂对抛光去除率的影响依次减弱。随着抛光盘转速的增加,雾化抛光的去除率经历了先缓慢增加、再急剧增加、后缓慢增加的变化过程。在同等的试验条件下,传统抛光的去除率为223 nm/min,铜片表面粗糙度为7.93 nm,雾化抛光去除率和铜片表面粗糙度分别为125 nm/min和3.81 nm;虽然去除率略有不及前者,但抛光液用量仅为前者的十几分之一。
A series of polishing slurries were compounded using silica as abrasive,H2O2 as oxidizer,triethanolamine as organic base and polyethylene glycol as dispersant by the orthogonal design method.Tetramethylammonium hydroxide was taken to adjust pH to 12.Coppers were polished on the UNIPOL-1 502 experiment machine using ultrasonic atomising method.The relation between material removal rate（MRR） and rotating speed was investigated,and experimental effects were compared between the traditional polishing and the ultrasonic atomization polishing.The results showed that the effect of dispersant,abrasive,organic base and oxidizer on MRR decreased in succession.As the rotating pad speed increased,atomization polishing removal rate went through a process of increase which was initially slow,then sharp,and last slow.Under the same test conditions,the removal rate and the copper surface roughness of traditional polishing were 223 nm/min and 7.93 nm,while those of atomization polishing were 125 nm/min and 3.81 nm.What is of utmost importance is the minimum quantity of the CMP liquid,which is only about one tenth compared with traditional polishing.
出处
《金刚石与磨料磨具工程》
CAS
北大核心
2011年第6期56-58,62,共4页
Diamond & Abrasives Engineering
基金
国家自然科学基金资助(51175228)
江苏省自然科学基金资助(BK20080605)
关键词
化学机械抛光
铜
去除率
雾化
chemical mechanical polishing（CMP）
copper
removing rate
atomization
