摘要
研究了柔性非晶硅掺杂氧化锡(SiSnO,STO)薄膜晶体管的电学特性及其在弯曲状态下的电学特性。通过射频磁控溅射在聚酰亚胺(Polyimide,PI)衬底上制备出了柔性非晶硅掺杂氧化锡薄膜晶体管。通过对比不同退火温度的器件性能,发现在300℃能获得最佳器件性能,其饱和迁移率达到2.71 cm^2·V^(-1)·s^(-1),开关比高于106,亚阈值摆幅为1.95 V·dec^(-1),阈值电压为2.42 V。对器件在不同曲率半径(5,10,20,30 mm)状态下进行输出特性和转移特性测试,发现其在弯曲状态下仍具有良好的电学性能。
A kind of flexible amorphous silicon doped tin oxide（SiSnO, STO） thin film transistor （TFT） with anti-bending property of polyimide as a flexible substrate was prepared by RF magnetron sputtering method. By comparing the performance of the devices with different annealing temperatures, it is found that the best device performance is achieved at 300 ℃, the field effect mobility is 2.71 cm 2·V -1 ·s -1 , the switching ratio is higher than 10 6 and the subthreshold swing is 1.95 V· dec -1 , and the threshold voltage is 2.42 V. By measuring the output characteristics and transfer characteristics of the device at different radius of curvature（5, 10, 20, 30 mm）, the device is still operating well under the four different radii of curvature.
作者
张建东
刘贤哲
张啸尘
李晓庆
王磊
姚日晖
宁洪龙
彭俊彪
ZHANG Jian-dong;LIU Xian-zhe;ZHANG Xiao-chen;LI Xiao-qing;WANG Lei;YAO Ri-hui ＊;NING Hong-long;PENG Jun-biao(Institute of Polymer Optoelectronic Materials and Devices,State Key Laboratory of LuminescentMaterials and Devices,South China University of Technology,Guangzhou 510640,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2018年第7期968-973,共6页
Chinese Journal of Luminescence
基金
国家重点研发计划(2017YFB0404703)资助项目
关键词
柔性
硅掺杂氧化锡
薄膜晶体管
flexible
silicon doped tin oxide
thin film transistor
