摘要
针对静电放电(ESD)防护过程中ESD防护器件开启速度慢、易引起栅氧击穿或电路烧毁的问题,提出了一种可控硅(SCR)结构的ESD防护器件开启速度的优化方法。首先,基于0.35μm Bipolar-CMOS-DMOS(BCD)工艺制备了P^+浮空和P^+接地SCR结构器件,通过分析阱间距对P^+接地SCR影响,获知当阱间距增至8.68μm时,器件开启速度快且过击穿电压低。其次,对比分析关键尺寸参数相同条件下P^+接地与P^+浮空SCR器件ESD防护性能,传输线脉冲测试结果表明,P^+浮空比P^+接地SCR开启速度更快。最后,通过进一步优化P^+浮空SCR器件特征参数,器件开启速度可提高约17.70%。TCAD仿真结果证明:与P^+接地SCR相比,P^+浮空SCR的电流密度分布较均匀,且导通时间短,有利于提高开启速度,因此P^+浮空SCR器件更适用于高速集成电路的ESD防护。
In orde to solve the problems of gate-oxide breakdown and circuit burning caused by the slow turn-on speed of electrostatic discharge（ESD）protection devices during the ESD process,a turn-on speed optimization method was proposed for ESD protection devices with silicon controlled rectifier（SCR）structure.Firstly,the P~＋ floating and P~＋ grounded SCR devices were fabricated using a 0.35μm Bipolar-CMOS-DMOS（BCD）process.By analyzing the influence of the well space on the P~＋ grounded SCR,it is known that the turn-on speed is faster and the over-shot voltage is lower when the well space is increased to 8.68μm.Secondly,the ESD performances of the P~＋ floating and P~＋ grounded SCR devices with the same key size parameters were compared and analyzed.The transmission line pulse test results show that the turn-on speed of P~＋ floating is faster than the P~＋ grounded SCR.Finally,by further optimizing the characteristic parameters of the P~＋ floating SCR,the turn-on speed was increases by about 17.70%.The TCAD simulation results indicate that the P~＋ floating SCR is more effective to improve the turnon speed due to the more uniform current density distribution and the shorter conduction timethan those of the P~＋ grounded SCR.Therefore,the P~＋ floating SCR is more suitable for highspeed integrated circuit ESD protections.
作者
马艺珂
梁海莲
顾晓峰
王鑫
刘湖云
MA Yike;LIANG Hailian;GU Xiaofeng;WANG Xin;LIU Huyun(Engineering Research Center of IoT Technology Applications （Ministry of Education）, Department of Electronic Engineering, Jiangnan University, Wuxi , Jiangsu, 214122, CHN)
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2018年第2期136-140,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目(61504049)
江苏省自然科学基金资助项目(BK20150156)
2017年江苏省研究生科研创新计划资助项目(KYCX17_1487)
关键词
静电放电
可控硅
传输线脉冲测试
电流密度
开启速度
electrostatic discharge
silicon controlled rectifier
transmission line pulse test
current density
turn-on speed
