摘要
采用P型单晶硅片为衬底,并经混合酸溶液腐蚀抛光、清洗后,利用射频磁控溅射镀膜系统在其表面制备非晶硅薄膜;再结合快速光热退火工艺,于N2气氛下480℃退火30 min,得到晶化硅薄膜;利用光学金相显微镜、XRD衍射仪和拉曼散射光谱(Raman)仪对单晶硅衬底和晶化硅薄膜进行结构和性能表征。研究了混合酸溶液对单晶硅表面腐蚀效果、籽晶诱导外延生长晶化硅薄膜的物相结构和薄膜带隙。结果表明:采用混合酸溶液腐蚀后得到表面平整、光滑的单晶硅衬底;非晶硅薄膜经过快速退火后受籽晶诱导生成晶化硅薄膜,其晶相沿单晶硅衬底取向择优生长;随着非晶硅薄膜厚度从80 nm增加到280 nm,晶化后硅薄膜的表面粗糙度逐渐减小,晶化率从90.0%逐渐降低到37.0%;晶粒尺寸从6.65 nm逐渐减小到1.71 nm;带隙从1.18 e V逐渐升高到1.52 e V。
Amorphous silicon films were prepared by magnetron co-sputtering on the substrates of P type monocrystalline silicon, which have been corroded and cleaned via a mixed of acid solutions. The silicon films were realized by a rapid thermal annealing （RTP） at 480℃ for 30 min in N2 atmosphere. Optical metallographic microscope, X-ray diffractometer and Raman scattering were used to characterize the silicon films and monocrystalline substrates. The corrosion effect of mixed acid solution on monocrystalline silicon surface, the structures and band gaps of the films were investigated. The results show that, the smooth surface was obtained after the monocrystalline silicon was corroded by mixed acid solution, a-Si films was turned to crystalline silicon films after rapid thermal annealing and crystal-induced by seed crystal. The crystallization rate raduced from 90.0% to 37.0%, the grain size reduced from 6.65 nm to 1.71 nm, the band gap increased from 1.18 eV to 1.52 eV and the roughness decreased with the a-Si films increasing from 80 nm to 280 nm.
出处
《人工晶体学报》
CSCD
北大核心
2017年第12期2337-2342,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金联合基金(U1037604)
云南省基础研究重点项目(2017FA024)
关键词
诱导晶化
外延
退火
硅薄膜
晶化率
induced crystallization
epitaxially grown
annealing
silicon thin film
crystallization rate
