摘要
Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.
Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.
基金
The project was financially supported by the Australian Research Council
