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掺杂不同质量分数Y_2O_3、MgO对Al_2O_3陶瓷显微结构及介电性能的影响 被引量:1

Effects of Y_2O_3 and MgO doping on the microstructures and dielectric properties of Al_2O_3 ceramics
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摘要 利用放电等离子烧结技术制备了不同质量分数Y_2O_3单独掺杂及不同质量分数Y_2O_3、MgO共同掺杂的Al_2O_3陶瓷,研究了烧结助剂掺杂质量分数对Al_2O_3陶瓷显微结构及介电性能的影响。结果表明,孔隙率是影响Al_2O_3陶瓷介电性能的主要因素;单独掺杂质量分数为0.25% Y_2O_3时,Al_2O_3陶瓷得到最优的介电性能,介电常数(ε_r)为9.5±0.2,介质损耗(tanδ)稳定在10^(-3)数量级以内;同时掺杂Y_2O_3和MgO能进一步改善其介电性能,当两者质量分数均为0.25%时,得到最优值,介电常数(ε_r)为10.3±0.2,介质损耗(tanδ)稳定在8×10^(-4)以下。 The alumina ceramics doped by the different contents of Y_2O_3 and(Y_2O_3 + MgO) was prepared by spark plasma sintering,and the influence of dopant contents by mass on the microstructures and dielectric properties of alumina ceramics was studied.The results show that,the porosity of alumina ceramics is the main factor that affects dielectric properties.When Y_2O_3 is doped alone in the contents of 0.25% by mass,the alumina ceramics shows the best dielectric properties,the dielectric constant(ε_r) is 9.5 ± 0.2,and the dielectric loss(tanδ) is stable in the order of 10^-3.The addition of Y_2O_3 and MgO can further improve the dielectric properties of alumina ceramics.When the addition contents of Y_2O_3 and MgO by mass are both 0.25%,the optimum value of dielectric properties is obtained.The dielectric constant(ε_r) is 10.3 ± 0.2,the dielectric loss(tanδ) is stable and below 8 × 10^-4.
出处 《粉末冶金技术》 CAS CSCD 北大核心 2017年第4期255-262,共8页 Powder Metallurgy Technology
基金 国家国际科技合作专项资助项目(2014DFR50570)
关键词 AL2O3陶瓷 掺杂 放电等离子烧结 显微结构 介电性能 alumina ceramics doping spark plasma sintering microstructure dielectric properties
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