摘要
注氧隔离法 (SIMOX)和体硅智能剥离法 (smart cut)是目前制备绝缘体上的硅 (SOI)材料的最重要的两种方法。而离子注入是其中最主要工艺过程。本文简述了等离子体基离子注入 (PBII)在制备SOI的两种方法中应用的国内外研究现状。讨论了两种方法中需要考虑的共性问题 ,包括注入剂量的均匀性、等离子体中离子的选择、单一能量的获得以及避免C、N、O及金属粒子的污染等。并且针对SIMOX和smart cut各自的工艺特点 ,分别讨论了不同工艺参数的选择。
Most important methods to preparation of silicon on insulator are separation by implanted oxygen and smart cut of bulk silicon. The ion implantation is the main process of those methods. The recent developments of the preparation of SOI using plasma based ion implantation, were summarize respectively. The common consideration in this two methods were discussed, including the uniformity of the dose, the selection of the species of ions, the acquisition of the mono energetic implantation and the reduction of the surface contamination of C, N, O and metal particles. And then the choice of process parameters, the main problem emphasis on each method and some solutions of these problems, were discussed, based on the respective characteristics of them.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2002年第4期347-349,353,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目 (5992 52 0 5)
上海市学科带头人资助项目 (99XD1 4 0 2 9)
