摘要
本文报道了一种形成ＳＩＭＯＸ结构的等离子体浸没离子注入（ＰＩＩＩ）的新技术．与传统的离子注入相比，这种新技术具有高离子束流，大面积离子注入，极短的注入时间和低成本等优点．实验中，衬底硅片浸没在高离子密度的氧的等离子体中．在衬底所加的负高压的作用下，氧离子直接注入硅片之中．我们研究了ＰＩＩＩ的工艺条件，用ＰＩＩＩ制得了具有２０到５０ｎｍ厚的顶层硅层和２０到５０ｎｍ厚的氧化硅埋层的超薄ＳＩＭＯＸ硅片，并用ＲＢＳ、ＸＴＥＭ等技术对样品进行了测试．
Abstract A novel technique for SIMOX structure has been developed by using Plasma Immersion ion Implantation (Pill). Some of the advantages are high ion flux, large area implantation, short implantation time and low costs compared to conventional ion implantation. In Pill,the silicon substrate is immersed in a high ion density plasma from wthich oxygen ions are implanted into the substrate by a high negative bias. The parameters of PIII were optimized and a 20 to 50nm thick buried oxide layer with a sillicon overlayer thickness of 20 to 50nm was fabricated by PIII. The reaulting wafers were analyzed by using a variety of technique,including RBS and XTEM.
