摘要
在注氧形成的SOI衬底上制作了P型MOSFET。本文研究了不同退火温度对材料形成与器件性能的影响。结果表明,1300℃以上的退火有利于改善SIMOX(Separation by ImplantedOxygen)材料性能,MOS晶体管具有非常低的漏电流。
PMOS Transistors with channel mobilities within a few percent of the equivalent bulk values have been produced on silicon-on-insulator(SOI) substrates formed by oxygen implantation. By comparing the devices fabricated on different SOI substrates, the conclusion is drawn that higher annealing temperature above l 300 after implantation of oxygen is needed. The transistors have very low junction leakage.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第3期242-244,共3页
Research & Progress of SSE
