摘要
采用稳懋公司150 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计了一款5~10 GHz单片微波集成电路(MMIC)低噪声放大器(LNA)。该LNA采用三级级联结构,且每一级采用相同的偏压条件,电路的低频工作端依靠电容反馈,高频工作端依靠电阻反馈调节阻抗匹配,从而实现宽带匹配,芯片面积为2.5 mm×1 mm。测试结果表明,工作频率为5~10 GHz,漏极电压为2.3 V,工作电流为70 m A时,LNA的功率增益达到35 dB,平均噪声温度为82 K,在90%工作频段内输入输出回波损耗优于-15 dB,1 dB压缩点输出功率为10.3 dBm,仿真结果与实验结果具有很好的一致性。
A 5-10 GHz monolithic microwave integrated circuit（ MMIC） low noise amplifier（ LNA） was designed with the WIN 150 nm GaAs pseudomorphic high electron mobility transistor（ PHEMT） process. The LNA was in a three-stage cascade structure and the same bias voltage conditions were used by each stage. The impedance matching was adjusted by the capacitive feedback at low frequency and the resistance feedback at high frequency. Thus the wide-band matching was realized. The chip area is 2. 5 mm× 1 mm. The measured results show that in the operating frequency of 5-10 GHz,the drain voltage of 2. 3 V,and the operating current of 70 m A,the power gain of the LNA is 35 dB,the average noise temperature is 82 K. The input and output return losses are both better than-15 dB within 90% working frequency band and the output power at 1 dB compression point is 10. 3 dBm. The simulated results are in good agreement with experimental ones.
出处
《半导体技术》
CSCD
北大核心
2017年第8期569-573,597,共6页
Semiconductor Technology
基金
国家自然科学基金资助项目(11473060
11590784)
国家高技术研究发展计划(863计划)资助项目(2014AA123601)
科技部国际合作专项资助项目(2015DFA10720)
