摘要
基于GaAs PHEMT工艺,采用共源共栅宽带匹配结构,设计制作了1~12 GHz低噪声放大器单片电路。芯片采用双电源供电,可以通过改变栅压实现增益调整。测试结果表明,在1~12GHz频率范围内,增益大于14dB,增益平坦度小于±0.5 dB,噪声系数小于2dB,输入输出回波损耗小于-12d B,1dB压缩点输出功率在1~8 GHz频率范围内大于14d Bm,在1~12GHz频率范围内大于11dBm,芯片漏极采用5V供电,栅极工作电压为-0.5 V,芯片静态工作电流小于30m A。电路具有超宽带、功耗低、噪声系数低等特点,在宽带接收机系统有广泛的应用前景。
Based on the GaAs process,a 1- 12 GHz low noise amplifier monolithic circuit was designed and manufactured using the com- source com- gate wideband matching structure. The chip needs two supply voltage,the gain of chip can be adjusted by adjusting the gate voltage. Measurement results show that in the frequency range of 1- 12 GHz,the gain is larger than 14 d B with the gain flatness of less than ± 0. 5 d B,the noise figure is less than 2 d B,the input / output return loss is less than- 12 d B,and the output power at the 1 d B compression point is larger than 11 d Bm. In the frequency range of 1- 8 GHz the output power at the 1 d B compression point is larger than14 d Bm. The quiescent current is less than 30 m A with the drain supply voltage of ＋ 5 V and the gate supply voltage of- 0. 5 V. The circuit features ultrawide band,low power consumption,low noise figure,it is applied widely in broadband receiver system.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第4期276-279,共4页
Semiconductor Technology
关键词
GAAS
共源共栅
超宽带
低功耗
低噪声
GaAs
com-source com-gate
ultrawide band
low power consumption
low noise
