摘要
采用0.5μm GaAs增强型赝配高电子迁移率晶体管(E-PHEMT)工艺技术设计了一款10~1000 MHz具有低噪声和高线性度的超短波低噪声放大器。该放大器利用有源偏置电路和共源共栅结构设计而成,提出的新型有源偏置电路使该低噪声放大器(LNA)能够在复杂的环境中稳定地工作。仿真结果表明,在工作频带内,增益高于22 dB,噪声系数低于0.7 dB,输出1 dB压缩点高于26 dBm,输出三阶交调点高于43 dBm。
A 10-1000 MHz ultra-short wave amplifier with low noise and high linearity was designed using 0.5μm GaAs enhanced pseudo high electron mobility transistor(E-PHEMT)technology.The low noise amplifier(LNA)was designed by using active bias circuit and common source and common gate structure.The proposed new active bias circuit can make the LNA work stably in complex environments.In the operating frequency band,simulation results show that the gain is higher than 22 dB,the noise coefficient is lower than 0.7 dB,the output compression point of 1 dB is higher than 26 dBm,and the output inter-modulation point of third-order is higher than 43 dBm.
作者
张博
肖宝玉
ZHANG Bo;XIAO Baoyu(School of Electronic Engineering,Xian University of Posts and Telecommunications,Xian 710121,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2021年第5期474-478,共5页
Electronic Components And Materials
基金
陕西省教育厅服务地方产业化专项(15JF029)
陕西省重点研发计划项目(2018ZDXM-GY-010,2017ZDXM-GY-004,2016KTCQ01-08)
西安市集成电路重大专项(201809174CY3JC16)。
关键词
高线性度
有源偏置
共源共栅结构
低噪声放大器
输出三阶交调点
high linearity
active bias
common source common grid structure
low noise amplifier
output third-order intercept point
