摘要
Full-in-cell(FIC)产品信号线SD层结构为Mo-Al-Mo结构,使用Reactive Ion Etching(RIE)模式干法刻蚀设备进行N+Etch时,氯的化合物会吸附在信号线中的Al线侧壁及光刻胶的表面,当玻璃基板离开刻蚀腔体接触到空气,遇到水分发生水解反应,对Al线造成腐蚀,严重影响产品特性。本文在RIE刻蚀模式腔体内采用刻蚀条件变更改善Al腐蚀现象,通过对刻蚀的前处理步骤,后处理步骤以及去静电步骤的参数包括压强、功率和时间以及气体流量比进行实验设计并对数据进行分析。实验结果表明当后处理步骤2 000 W,O_2/SF_6比例为2 000mL·min^(-1)/50mL·min^(-1),压强为200mt(1mt=0.133Pa),Time为15s为最优条件,可以彻底改善Al腐蚀现象。此条件TFT特性方面更加优越,Dark I_(on)为1.91μA,Photo I_(off)为4.1pA。
Full-in-cell （FIC） product signal line SD-layer is Mo-Al-Mo structure, when using Reactive Ion Etching （RIE） mode dry etching device for N ＋ etching, the chlorine compounds absorbed on the side wall surface of the Al and photoresist line, when the glass substrate is etched away from the chamber exposed to air, the moisture encountered hydrolysis reaction, which will cause corrosion of Al wire and seriously affect the product characteristics. In this paper, the Al etching phenomenon is improved by changing the etching conditions in the RIE etching mode cavity. Related experimental design and data analysis of the parameters of the pretreatment step, the post-treatment step and the de-static step including the pressure, power and time and the gas ratio is discussed. The experimental results show that the Al corrosion can be improved when the posvtreatment step is 2 000 W, the ratio of O2/ SF6 is 2 000 mL · min-1/ 50 mL · min-1 , the pressure is 200 mt and the time is 15 s. This condition is more advantageous in terms of TFT characteristics, Dark /on is
作者
蒋会刚
高建剑
王晏酩
赵海生
王辉
吴超
JIANG Hui-gang GAO ZHAO Hai-sheng Jian-jian WANG Yan-ming WANG Hui WU Chao(Beijing BOE Optoelectronics Technology Co. ,Ltd ,Beijing , 100176 ,China)
出处
《液晶与显示》
CAS
CSCD
北大核心
2017年第7期518-525,共8页
Chinese Journal of Liquid Crystals and Displays
基金
京东方研发基金~~
关键词
铝腐蚀
TFT沟道
TFT特性
沟道厚度
aluminum corrosion
TFT channel
TFT characteristics
channel thickness
