摘要
氮化镓高电子迁移率晶体管(Ga N HEMT)具有高功率密度、高效率和高工作温度的优异特性,在电子装备和武器系统中具有广泛应用。随着以固态功放为核心的有源阵面的不断增加,高效率,高功率,小型化的功率放大器成为未来有源相控阵雷达的首选功率器件。本文通过采用新颖的偏置电路实现了一款便于T/R组件内部集成的平面式、小型化、高效率Ga N内匹配功率放大器,经测试,在3.1-3.4GHz带宽内,连续波输出可达80W以上,附加效率≥65%,功率增益≥12d B,外形尺寸仅有15mm*6.6mm*0.8mm。经过射频加速寿命试验及多批次系统联机测试,该产品完全满足相控阵雷达系统的使用要求。
With the excellent characteristics of high power density, high working efficiency and high operating temperature, the Ga N high electron mobility transistor(HEMT) is widely used in military electronic equipment and weapon system. As the increases of active array based on the solid-state power amplifier(PA), high power, high efficiency and pint-sized power amplifier will be the principal choice in active phased array radar(APAR), In this paper, a novel bias circuit was proposed to realize a complanate, miniaturized and high efficiency internal matched Ga N power amplifier, which can be easily integrated in T/R modules. The experiment results show that the maximum output power is more than 80 W, the power added efficiency is more than 65% and the power gain is greater than 12 d B across the band of 3.1-3.4 GHz. The external dimensions of the device is only 15 mm*6.6mm*0.8 mm. By RF accelerated life test and multi-batch on line test, the products completely meet the requirements of the APAR.
出处
《数字技术与应用》
2017年第3期207-209,共3页
Digital Technology & Application
