摘要
为了准确描述毫米波Ga N高电子迁移率晶体管(HEMT)短栅长器件的热电效应,在Silvaco TCAD软件中建立了毫米波AlGaN/GaN HEMT能量平衡物理模型。该模型不仅考虑表面态和陷阱效应的作用,还引入了热电效应对器件性能的影响。直流及小信号测量数据表明,能量平衡热电物理模型能准确模拟毫米波AlGaN/GaN HEMT器件的直流和小信号输出特性。基于该物理模型,进一步研究了栅源和栅漏间距对毫米波AlGaN/GaN HEMT饱和沟道电流、沟道峰值温度以及截止频率的影响,取得的研究数据可用于指导毫米波AlGaN/GaN HEMT新器件开发及电路设计。
In order to accurately describe the electrothermal effect of short gate length millimeterwave Ga N high electron mobility transistors（ HEMTs）,an energy balance physical model of millimeterwave AlGaN/GaN HEMTs was established by using Silvaco TCAD software. The surface state and trapping effect were considered,and the influence of the electrothermal effect on the electrical performance of the device was introduced. The DC and small-signal measurement data show that the energy balance electrothermal physical model can accurately simulate the DC and small-signal output characteristics of the millimeter-wave AlGaN/GaN HEMTs. Based on this physical model,the impacts of gate-source and gate-drain spacing on saturation channel current,peak channel temperature and the cutoff frequency of the millimeter-wave AlGaN/GaN HEMTs were studied respectively. The research results can be used to guide the development of new AlGaN/GaN HEMT devices and circuit design.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第8期604-609,共6页
Semiconductor Technology
