摘要
本实验采用真空蒸馏多级冷凝提纯粗铟的实验研究,其特点是通过高温真空蒸馏使得粗铟挥发,根据不同金属元素冷凝温度的不同,设置适合的冷凝温度梯度,从而达到除杂提纯的效果,实验表明,由于冷凝温度的不同杂质元素分别冷凝在1-10级的冷凝盘的两端,而金属铟主要集中在中间冷凝盘中。最佳条件:温度1400℃,保温1 h,压强为10~15 Pa,此时铟主要分布在中间3-6冷凝盘中,其中杂质元素Cu、Cd、Fe、Al、Sn主要分布在1-2级和杂质元素Pb、Tl主要分布在8-10级冷凝盘,其中3、4冷凝盘中铟纯度为99.9%,直收率为53.87%,5、6冷凝盘的铟纯度为99.99%,直收率为36.7%,,因此99.9%以上的直收率达到90%以上,杂质可以达到4~6 N(99.99%~99.9999%)铟的国家标准要求。
The crude indium was purified by high temperature distillation and multi-stage condensation in vacuum. The influence of the distillation conditions,including the volatization temperature and time,temperature gradient of 10 condensation plates and pressure,on the indium recovery efficiency and impurity condensation on different plates was investigated for process optimization. Distilled at 1400℃ in 10～15 Pa for 60 min,highly pure In（with impurity contents below those of national standard 4 N～6 N purity of In） was extracted. To be specific,In mainly condensed on the 3^rd-6^thplates; Cu,Cd,Fe,Al and Sn impurities solidified on the 1^st-2^ndplates; and Pb and Tl impurities deposited on the 8^th-10^ thplates. The purity and recovery rate of In were 99. 9% and 53. 87% on the 3rdand4 thplates,and 99. 99% and 36. 7% on the 5^thand 6^thplates,respectively. The recovery-rate was higher than 90%with an indium purity better than 99. 9%.
作者
张丁川
邓勇
袁聪聪
杨斌
戴永年
Zhang Dingchuan Deng Yong Yang Bin Dai Yongnian(National Engineering Laboratory for Vacuum Metallurgy ,Kunming University of Science and Technology, Kunming 650093, China Faculy of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China)
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2017年第1期94-99,共6页
Chinese Journal of Vacuum Science and Technology
关键词
真空蒸馏
多级冷凝
铟
精铟
Vacuum distillation
Grading condensation
Indium
Purity indium
