摘要
This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET transistors.Performance of the MOSFETs has been tested in different gate voltages.Sensitivity of the transistors for 662 ke V gamma ray is studied in 1–5 Gy dose range.It was found that for transistors irradiated in biased mode,significant changes in the threshold voltage occurred,and the sensitivity to gamma rays increased with the bias voltage.
This article is about the absorbed-dose-dependent threshold voltage shift of the MOSFET transistors. Performance of the MOSFETs has been tested in different gate voltages. Sensitivity of the transistors for 662 keV gamma ray is studied in 1-5 Gy dose range. It was found that for transistors irradiated in biased mode, significant changes in the threshold voltage occurred, and the sensi-tivity to gamma rays increased with the bias voltage.
