摘要
利用等效1 MeV中子和γ射线对1200 V SiC功率MOSFET进行辐射,研究了电离损伤和位移损伤对器件的影响,并分析了辐射后器件栅氧长期可靠性。结果表明:中子辐射后器件导通电阻发生明显退化,与辐射引入近界面缺陷降低载流子寿命和载流子迁移率有关。时间依赖的介质击穿(TDDB)结果表明,栅泄漏电流呈现先增加后降低趋势,与空穴捕获和电子捕获效应有关。中子辐射后栅漏电演化形式未改变,但氧化层击穿时间增加,这是中子辐射缺陷增加了Fowler-Nordheim(FN)隧穿势垒的缘故。总剂量辐射在器件氧化层内引入陷阱电荷,使得器件阈值电压负向漂移。随后的TDDB测试表明,与中子辐射一致,总剂量辐射未改变栅漏电演化形式,但氧化层击穿时间提前。这是总剂量辐射在氧化层内引入额外空穴陷阱和中性电子陷阱的缘故。
The 1200 V SiC power MOSFETs were irradiated with equivalent 1 MeV neutron andγ-rays to investigate the effects of ionization damage and displacement damage on the electrical parameters of the devices,and the impact of radiation effects on the reliability of the gate oxide was analyzed.The results show that the significant degradation of on-resistance after neutron irradiation is related to the irradiation-induced near-interface defects,thus reducing the carrier lifetime and mobility.Time-dependent dielectric breakdown(TDDB)results show that the gate leakage current increases and then decreases before breakdown,which is related to the hole trapping and electron trapping effects.After neutron irradiation,the Fowler-Nordheim(FN)tunneling barrier increases,the gate leakage current decreases and the device oxide breakdown time increases.The total dose irradiation induces the trapped charge within the oxide,as a result,the threshold voltage drift negatively.TDDB tests show that the total dose irradiation does not change the form of the gate leakage evolution,but the oxide breakdown time is advanced.This is due to the introduction of additional hole traps and neutral electron traps within the oxide.
作者
杜卓宏
肖一平
梅博
刘超铭
孙毅
DU Zhuohong;XIAO Yiping;MEI Bo;LIU Chaoming;SUN Yi(China Aerospace Components Engineering Center,Beijing 100094,China;Space Environment Simulation Research Infrastructure,Harbin Institute of Technology,Harbin 150001,China)
出处
《电子元件与材料》
CAS
北大核心
2024年第2期182-189,共8页
Electronic Components And Materials
基金
国家自然科学基金(12275061)。
