摘要
碳化硅功率器件凭借优异性能被抗辐照应用领域寄予厚望。为探究碳化硅功率器件抗中能质子辐照损伤能力,明确其辐射效应退化机制,对标低地球轨道累积十年等效质子位移损伤注量,针对高性能国产碳化硅结势垒肖特基二极管开展了10 MeV质子室温、无偏压辐照实验。测试了器件辐照前后的正向伏安特性、反向伏安特性、电容特性等电学特性,并通过深能级瞬态谱仪分析了辐照缺陷引入特点。结果显示:器件辐照后正向电性能稳定,较低反向安全电压下漏电流减小,注量增加后击穿电压严重退化;分析认为质子辐照导致势垒高度增加、辐照缺陷增加、载流子浓度降低。碳化硅肖特基功率器件的辐射损伤过程及机理研究,为其中能质子环境应用的评估验证提供了数据支撑。
[Background]Silicon carbide junction barrier Schottky (SiC JBS) diode is a kind of power device based on wide bandgap semiconductor.SiC JBS diode is expected to become an important part of electric propulsion systems in the radiation application field in the future space exploration due to its excellent high-voltage,highfrequency and high-power characteristics.However,there are a large number of protons in the typical orbit of spacecraft,which always threaten the stable operation of spacecraft,including its key components.[Purpose]This study aims to explore the resist ability of SiC JBSs to the degradation of medium energy proton irradiation,and clarify the mechanism of radiation effect of SiC JBSs from medium energy proton.[Methods]Based the proton equivalent displacement damage dose in low Earth orbit for ten years,the SiC JBSs were firstly irradiated using 10 MeV protons at fluences ranging from 3×109cm-2to 3×1010cm-2at room temperature and without bias voltage.And the macro electrical characteristics of the SiC JBSs both before and after irradiation,including the forward current-voltage (I-V),reverse I-V and capacitance-voltage (C-V) characteristics,were tested.Then the irradiationinduced defects characteristics were tested by deep level transient spectrum (DLTS).Further,the related degradation mechanism that was associated with this phenomenon was also investigated using based on the test data and mathematical calculation.Finally,irradiation experiments of accelerator protons were carried out for commercial SiC JBSs.[Results]The results show that the forward electrical characteristic of the SiC JBSs is stable,and the leakage current decreases at low reverse safety voltage.But the rated breakdown voltage is seriously degraded with the increase of irradiation fluence.The main contribution to the change of SiC JBSs characteristics originates from the increase of interface charge,deep level defects and Schottky barrier height,and the decrease of carrier density and carrier diffusion length in the drift region.
作者
刘翠翠
李治明
韩金华
郭刚
殷倩
张艳文
刘建成
LIU Cuicui;LI Zhiming;HAN Jinhua;GUO Gang;YIN Qian;ZHANG Yanwen;LIU Jiancheng(National Radiation Application Center,China Institute of Atomic Energy,Beijing 102413,China;School of Nuclear Science and Technology,Lanzhou University,Lanzhou 730000,China)
出处
《核技术》
CAS
CSCD
北大核心
2023年第2期42-50,共9页
Nuclear Techniques
基金
中核集团"青年英才"科研项目(No.11FY212306000801)资助。
