期刊文献+

石墨烯横向自旋阀研究进展

The Research Progress of Graphene Lateral Spin Valve
下载PDF
导出
摘要 横向自旋阀是目前最重要的一种自旋器件。本文综述石墨烯作为横向自旋阀沟道材料的研究进展。虽然石墨烯作为横向自旋阀沟道材料的研究的报道已经很多,但是对于其电阻率、自旋寿命、自旋扩散长度、自旋霍尔角、自旋信号以及与其他材料的接触电阻等参数的确定仍有问题。目前实验获得的这些数据差别较大,影响因素尚不清晰。另外理论工作相对缺乏。这些问题将影响石墨烯在自旋电子学中的应用,需要进一步深入研究。 The lateral spin valve is the most important spintronic device studied in-depth so far. This paper reviews the research progress of graphene as the channel material of lateral spin valve. Although there are a lot of reports about the graphene as the channel material of lateral spin valve, the resistivity, the spin lifetime, the spin diffusion length, the spin Hall angle, the spin signal, and the contact resistance with other materials are not determinable. There exist greater differences between the data obtained by experiments, and the influence factors are unclear. In addition, it is relatively lack of theoretical work. These problems will affect the application of graphene in spintronics, so it is necessary to do further in-depth study.
作者 郭子政
出处 《信息记录材料》 2016年第2期6-12,共7页 Information Recording Materials
基金 国家自然科学基金项目(61308038)
关键词 自旋电子学 自旋输运 横向自旋阀 石墨烯 Spintronics Spin transport Lateral spin valve Graphene
  • 相关文献

参考文献47

二级参考文献145

  • 1潘靖,周岚,陶永春,胡经国.外应力场下铁磁/反铁磁双层膜系统中的自旋波[J].物理学报,2007,56(6):3521-3526. 被引量:4
  • 2Theis T N,Solomon P M.It's time to reinvent the transistor![J].Science,2010,327 (5973):1600-1601. 被引量:1
  • 3Slonczewski J C.Current-driven excitation of magnetic mul tilayers[J].J.Magn.Magn.Mater.,1996,159:1-7. 被引量:1
  • 4Zhang S F,Levy P M,and Fert A.Mechanisms of spin-po larized currentdriven magnetization switching[J].Phys.Rev.Lett.,2002,88:26601. 被引量:1
  • 5Sankey J C,Cui Y T,Sun J Z,et al.Measurement of the spin-transfer torque vector in magnetic tunneljunctions[J].Nat.Phys.,2008,4:67. 被引量:1
  • 6Kubota H,Fukushima A,Yakushiji K,et al.Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions[J].Nat.Phys.,2008,4:37. 被引量:1
  • 7Chiba D.Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor[J].Science,2003,301:943. 被引量:1
  • 8Maruyama T,Shiota Y,Nozaki T,et al.Large voltage-in duced magnetic anisotropy change in a few atomic layers of Iron[J].Nat.Nanotech.,2009,4:158-161. 被引量:1
  • 9Jian Zhu,Katine J A,Rowlands Graham E,et al.Volt age-induced ferromagnetic resonance in magnetic tunnel junc tions[J].Phys.Rev.Lett.,2012,108:197203. 被引量:1
  • 10Zhou Y.Effect of the field-like spin torque on the switch ing current and switching speed of magnetic tunnel junction with perpendicularly magnetizedfree layers[J].J.Appl.Phys.,2011,109:023916. 被引量:1

共引文献9

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部