摘要
随着器件尺寸的缩小和集成度的不断提高,电子器件的发展正遭遇功耗以及尺寸极限等瓶颈。为突破这些瓶颈,许多新型的电子器件模型应运而生。其中重要的一类是基于量子力学隧道效应或者与隧道效应直接相关的器件。因此,严格计算隧道电流成为这些器件研究的基础。本文以磁隧道结和隧穿场效应管为例,介绍了隧道电流计算的理论基础以及一维到一维(1T1)、二维到二维(2T2)、二维到三维(2T3)、三维到二维(3T2)等各种模式的隧道电流的计算方法和研究进展。由于石墨烯具有许多独特性质,成为近年人们关注的明星材料。但石墨烯材料的采用也带来许多理论和实践中的问题,比如3T2隧穿的理论计算问题。本文对这些问题也进行了简单综述和讨论。
With the constant improvement of the narrowing of the device size and integration, the develop- ment of the electronic devices are encountering the bottleneck of power consumption and size limit. To break through the bottleneck, many new types of electronic devices are putting forward. One important kind of device is based on tunnel effect of quantum mechanics or is directly related to the tunnel effect. Therefore, strict calcu- lation of tunnel current becomes the foundation of research on these devices. Taking the magnetic tunnel junc- tion and tunneling field effect transistor as examples, we introduced the theoretical foundation of the tunnel cur- rent calculation and presented the tunnel current calculation methods and research progress for all sorts of mod- els such as one-dimensional to one-dimensional （1T1）, two-dimensional to two-dimensional （2T2）-, two-di- mensional to three-dimensional （2T3）,and three-dimensional to two-dimensional （3T2）. Due to its unique prop- erties, graphene has become the focus of attention in recent years. But the using of graphene materials also brings many problems both in theory and practice, such as the computing problem for 3T2 tunneling. These problems were also briefly reviewed and discussed.
出处
《信息记录材料》
2014年第5期52-57,共6页
Information Recording Materials
基金
国家自然科学基金项目(61308038)
广东省高等学校人才引进专项资金项目
华南农业大学校长科学基金项目
