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非共线横向自旋阀结构逆自旋霍尔效应 被引量:1

Inverse Spin Hall Effect in Non-collinear Iateral Spin Valve Structures
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摘要 逆自旋霍尔效应是测量材料自旋输运参数(比如自旋霍尔角、自旋扩散长度等)的重要手段。目前关于逆自旋霍尔效应的实验研究比较多,但理论计算相对缺乏。发展高效精准的计算方法十分重要。本文计算了横向自旋阀结构中,逆自旋霍尔信号随磁铁非共线角度的变化关系。我们的计算针对目前最具前景的常规合金Cu Bi和Cu Ir展开。结果表明Cu Bi的逆自旋霍尔信号最强。对计算的一些困难(比如接触电阻的确定等)也做了讨论。结果对深入理解自旋输运具有一定价值。 The inverse spin Hall effect experiment is an important means for spin transport measurement of material parameters (such as the spin Hall angle, the spin diffusion length , etc.). Currently, there are much more experimental researches on the inverse spin Hall effect than theoretical calculations. In this case, the development of efficient and accurate calculation method is of great importance. In this paper, we calculate the inverse spin Hall signal in a lateral spin valve structure as the function of the non-collinear angle between the two magnets. Our calculations focus on the most promising normal alloys , i.e., CuBi and Culr. The results show that the inverse spin Hall signal of CuBi is the strongest among these alloys. Some of the difficulties for computing (such as the determination of contact resistance, etc.) are also discussed. This research has a certain value for the deep understanding of the spin transport.
作者 郭子政
出处 《信息记录材料》 2015年第3期52-57,共6页 Information Recording Materials
基金 国家自然科学基金项目(61308038)
关键词 横向自旋阀 自旋霍尔效应 逆自旋霍尔效应 自旋电路模型 非共线 lateral spin valve spin Hall effect inverse spin Hall effect spin-circuit model non-collinear
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参考文献25

  • 1Slonczewski J C.Current-driven excitation of magnetic multilayers[J].J.Magn.Magn.Mater.,1996,159:1-7. 被引量:1
  • 2Xu H Z,Chen X,Liu J M..Chaos suppression in a spin-torque nano-oscillator[J].J.Appl.Phys.,2008,104:093919. 被引量:1
  • 3Martinez E,Emori S,Perez N,et al.Current-driven dynamics of Dzyaloshinskii domain walls in the presence of in-plane fields:Full micromagnetic and one-dimensional analysis[J].J.Appl.Phys.,2014,115:213909. 被引量:1
  • 4Datta S,Das B.Electronic analog of the electrooptic modulator[J].Appl.Phys.Lett,1990,56:665. 被引量:1
  • 5Guo G Y,Murakami S,Chen T-W,et al.Intrinsic spin Hall effect in platinum:first-principles calculations[J].Phys.Rev.Lett.,2008,100:096401. 被引量:1
  • 6Liu L,Pai C F,Li Y,et al.Spin-Torque switching with the giant spin Hall effect of tantalum[J].Science,2012,336:555. 被引量:1
  • 7Pai C F,Liu L Q,Li Y,et al.,Spin transfer torque devices utilizing the giant spin Hall effect of tungsten[J].Appl.Phys.Lett.,2012,101:122404. 被引量:1
  • 8Wang X H and Manchon A,Rashba spin torque in an ultrathin ferromagnetic metal layer[J].2011,ar Xiv:1111.5466v1. 被引量:1
  • 9Liu L Q,Moriyama T,Ralph D C,et al.Spin-torque ferromagnetic resonance induced by the spin Hall effect[J].Phys.Rev.Lett.2011,106:036601. 被引量:1
  • 10Skinner T D,Ferguson A J.Switching nano-magnets with the spin—orbit interaction[J].Nano Today,2014,9:163—165. 被引量:1

二级参考文献37

  • 1潘靖,周岚,陶永春,胡经国.外应力场下铁磁/反铁磁双层膜系统中的自旋波[J].物理学报,2007,56(6):3521-3526. 被引量:4
  • 2Theis T N,Solomon P M.It's time to reinvent the transistor![J].Science,2010,327 (5973):1600-1601. 被引量:1
  • 3Slonczewski J C.Current-driven excitation of magnetic mul tilayers[J].J.Magn.Magn.Mater.,1996,159:1-7. 被引量:1
  • 4Zhang S F,Levy P M,and Fert A.Mechanisms of spin-po larized currentdriven magnetization switching[J].Phys.Rev.Lett.,2002,88:26601. 被引量:1
  • 5Sankey J C,Cui Y T,Sun J Z,et al.Measurement of the spin-transfer torque vector in magnetic tunneljunctions[J].Nat.Phys.,2008,4:67. 被引量:1
  • 6Kubota H,Fukushima A,Yakushiji K,et al.Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions[J].Nat.Phys.,2008,4:37. 被引量:1
  • 7Chiba D.Electrical manipulation of magnetization reversal in a ferromagnetic semiconductor[J].Science,2003,301:943. 被引量:1
  • 8Maruyama T,Shiota Y,Nozaki T,et al.Large voltage-in duced magnetic anisotropy change in a few atomic layers of Iron[J].Nat.Nanotech.,2009,4:158-161. 被引量:1
  • 9Jian Zhu,Katine J A,Rowlands Graham E,et al.Volt age-induced ferromagnetic resonance in magnetic tunnel junc tions[J].Phys.Rev.Lett.,2012,108:197203. 被引量:1
  • 10Zhou Y.Effect of the field-like spin torque on the switch ing current and switching speed of magnetic tunnel junction with perpendicularly magnetizedfree layers[J].J.Appl.Phys.,2011,109:023916. 被引量:1

共引文献7

同被引文献46

  • 1Brataasa A, Bauerb G E W, Kellyc P J. Non-col 1 i n e a r magnetoelectronics [J]. PhysicsReports, 2006, 427:157 - 255. 被引量:1
  • 2Han Wei, Pi K, McCreary K M, et al. Tunnel ingspin injection into single layer graphene [J].Phys. Rev. Lett. , 2010, 105: 167202. 被引量:1
  • 3Kimura T,01ani Y,and Hamr 1 e J. Enhancementof spin accumulation in a nonmagnetic layer byreducing junction s ize [J] . Phys. Rev. B,2006,73: 132405. 被引量:1
  • 4OtaniY,Kimura T. Manipulation of spin currentsin metallic Systems [J] . Phi 1. Trans. R. Soc. A,2011,369: 31 36 - 3149. 被引量:1
  • 5KimuraT,Hamrle J, and Otani Y.Estimation ofspin-diffusion length from the magnitude of spin-current absorption: Multiterminal ferromagnetic /nonf erromagnet ic hybrid s tructures[J]. Phys. Rev.B, 2005, 72: 014461. 被引量:1
  • 6Beh i n-Ae i n B, Sarkar A, Srinivasan S, etal. Switching ener gy-delay of all spin log icdevices [J] . Appl. Phys. Lett. , 2 01 1, 98 : 1235 1 0. 被引量:1
  • 7Beh in-Ae i n B, Datta D, Sayeef S, e t al.Proposa1 for an all-spin logic device with bui1t-in memory [J]. Nat. Nanotech. , 2010, 5: 266. 被引量:1
  • 8DattaS,Salahuddin S, Behin-Aein B. Non-volatile spin switch for boolean and non-booleanlogic. Appl. Phys. Lett. , 2012, 101: 25241 1. 被引量:1
  • 9TakahashiS and Maekawa S. Spin inject ion anddetect ion in magnetIc nanostructures[J]. Phys. Rev.B, 2003, 67: 052409. 被引量:1
  • 10GuoZi-Zheng. Effects of the channelmaterial parameters on the spin-torque criticalcurrent of lateral spin valves[J]. SuperlatticeMicrostruct. , 2014, 75: 468-476. 被引量:1

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