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一种结构紧凑的三联对称式IGCT相模块的设计 被引量:3

Design of a Tri-linked Symmetry IGCT Phase Module with Compact Structure
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摘要 设计了一款高密度、高可靠性的三联对称式三电平IGCT相模块,其电气、压装、冷却被一体化高度集成,解决了多重平板型半导体器件压装、高压低电感柔性母排连接、高效冷却管网布局等技术难题;其换流路径对称,杂散电感可控制在120nH以内。试验结果表明,该相模块的输出达2000A(rms)/4840V(DC),可将单传动变流器容量提升至11MVA。 It designed a tri-linked structural symmetry IGCT phase module based on NPC three-level circuit with high density and high reliability. Its electrical design, press mounting design and water-cooling design are highly integrated within one unit. Variety of technical problems were overcome, such as multi-press mounting of plate semiconductor, high-voltage-low-inductance flexible busbar connection, high efficiency cooling pipe net distribution, etc. Commutation path of the module is symmetric and its stray inductance can be controlled within 120 n H. Experimental results show that output current of the phase module can be up to 2000A(rms) at DC 4 840 V and the capacity of single driving converter can be promoted to 11 MVA.
出处 《大功率变流技术》 2015年第6期8-13,共6页 HIGH POWER CONVERTER TECHNOLOGY
基金 国家科技支撑计划项目(2012BAF09B02)
关键词 IGCT 三电平 相模块 三联对称 杂散电感 损耗 IGCT three-level phase module tri-linked stray inductance loss
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  • 1Carroll E, Klaka S, Linker S. Integrated gate-commutated thyristors: a new approach to high power electronics [ C ] // IEMDC. Milwaukee: 1997. 被引量:1
  • 2Nabae A,Takahashi I,Akagi H. A new neutral point clamped PWM inverter [J] . IEEE Transactions on Industry Application,1981 (17): 518-523. 被引量:1
  • 3王成胜,李崇坚,李耀华,绳伟辉,兰志明.7.5MVA大功率三电平IGCT交-直-交变流器[J].电工技术学报,2007,22(8):24-27. 被引量:18
  • 4胡家喜,宋娇.三电平IGCT变流器换流研究[J].大功率变流技术,2009(5):5-9. 被引量:4
  • 5ABB. Asymmetric Integrated Gate-Commutated Thyristor 5SHY 35L4520[Z/OL].2014-O7-Ol[2015-O8-13].https://library.e.abb. com/public/e2ddf6db6ffcba0d83257d0a0028feba/5SHY%20 35L4520_5 SYA 1248-01 July%2014.pdf. 被引量:1
  • 6ABB. Fast Recovery Diode 5SDF 10H4503 [Z/OL].2006-10-01 [2015- 08-13]. https://library.e.abb.corn/public/c 128e2fe32622772c 12572340 )492985/5 SDF%2010H4503_5 SYA 1163 -010ct%2006.pdf. 被引量:1
  • 7ABB Switzerland Ltd Semiconductors. Mechanical clamping of press-pack high power semiconductors [Z/OL].200212015-08- 13].https ://library.e.abb.com/public/51237a995b 14a4ffc 1257332 002be211/Mechanical%20clamping%20o f%20pre s s-pack_%20 5 SYA%202036-03_NewLay.pdf. 被引量:1
  • 8ABB Switzerland Ltd Semiconductors. Applying IGCTs_5SYA 2032-03[Z/OL]. [2015-08-13]. https://library.e.abb.com/publie/5115 4b233cdcc83883257cd3002af728/Applying%20IGCTs_5SYA%20 2032'03.pdf. 被引量:1
  • 9谢路耀.基于IGCT的NPC三电平中压大容量变流装置关键技术研究[D].北京:北京交通大学,2012. 被引量:3
  • 10熊妍,沈燕群,江剑,何湘宁.IGBT损耗计算和损耗模型研究[J].电源技术应用,2006,9(5):55-60. 被引量:64

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